One-dimensional van der Waals heterojunction diode

Fuente: arXiv
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Autores principales: Feng, Ya, Li, Henan, Inoue, Taiki, Chiashi, Shohei, Rotkin, Slava V., Xiang, Rong, Maruyama, Shigeo
Formato: Preprint
Publicado: 2020
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author Feng, Ya
Li, Henan
Inoue, Taiki
Chiashi, Shohei
Rotkin, Slava V.
Xiang, Rong
Maruyama, Shigeo
author_facet Feng, Ya
Li, Henan
Inoue, Taiki
Chiashi, Shohei
Rotkin, Slava V.
Xiang, Rong
Maruyama, Shigeo
contents The synthesis of one-dimensional van der Waals heterostructures was realized recently, which opens up new possibilities for prospective applications in electronics and optoelectronics. The even reduced dimension will enable novel properties and further miniaturization beyond the capabilities of its two-dimensional counterparts have revealed. The natural doping results in p-type electrical characteristics for semiconducting single-walled carbon nanotubes, while n-type for molybdenum disulfide with conventional noble metal contacts. Therefore, we demonstrate here a one-dimensional heterostructure nanotube of 11-nm-wide, with the coaxial assembly of semiconducting single-walled carbon nanotube, insulating boron nitride nanotube, and semiconducting molybdenum disulfide nanotube which induces a radial semiconductor-insulator-semiconductor heterojunction. When opposite potential polarity was applied on semiconducting single-walled carbon nanotube and molybdenum disulfide nanotube, respectively, the rectifying effect was materialized.
format Preprint
id arxiv_https___arxiv_org_abs_2012_03180
institution arXiv
publishDate 2020
record_format arxiv
spellingShingle One-dimensional van der Waals heterojunction diode
Feng, Ya
Li, Henan
Inoue, Taiki
Chiashi, Shohei
Rotkin, Slava V.
Xiang, Rong
Maruyama, Shigeo
Mesoscale and Nanoscale Physics
The synthesis of one-dimensional van der Waals heterostructures was realized recently, which opens up new possibilities for prospective applications in electronics and optoelectronics. The even reduced dimension will enable novel properties and further miniaturization beyond the capabilities of its two-dimensional counterparts have revealed. The natural doping results in p-type electrical characteristics for semiconducting single-walled carbon nanotubes, while n-type for molybdenum disulfide with conventional noble metal contacts. Therefore, we demonstrate here a one-dimensional heterostructure nanotube of 11-nm-wide, with the coaxial assembly of semiconducting single-walled carbon nanotube, insulating boron nitride nanotube, and semiconducting molybdenum disulfide nanotube which induces a radial semiconductor-insulator-semiconductor heterojunction. When opposite potential polarity was applied on semiconducting single-walled carbon nanotube and molybdenum disulfide nanotube, respectively, the rectifying effect was materialized.
title One-dimensional van der Waals heterojunction diode
topic Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2012.03180