THz intersubband electroluminescence from n-type Ge/SiGe quantum cascade structures
Fuente:
arXiv
Guardado en:
| Autores principales: | , , , , , , , , , , , , , , , , , |
|---|---|
| Formato: | Preprint |
| Publicado: |
2021
|
| Materias: | |
| Acceso en línea: | |
| Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
| _version_ | 1866912084564901888 |
|---|---|
| author | Stark, David Mirza, Muhammad Persichetti, Luca Montanari, Michele Markmann, Sergej Beck, Mattias Grange, Thomas Birner, Stefan Virgilio, Michele Ciano, Chiara Ortolani, Michele Corley, Cedric Capellini, Giovanni Di Gaspare, Luciana De Seta, Monica Paul, Douglas J. Faist, Jérôme Scalari, Giacomo |
| author_facet | Stark, David Mirza, Muhammad Persichetti, Luca Montanari, Michele Markmann, Sergej Beck, Mattias Grange, Thomas Birner, Stefan Virgilio, Michele Ciano, Chiara Ortolani, Michele Corley, Cedric Capellini, Giovanni Di Gaspare, Luciana De Seta, Monica Paul, Douglas J. Faist, Jérôme Scalari, Giacomo |
| contents | We report electroluminescence originating from L-valley transitions in n-type Ge/Si$_{0.15}$Ge$_{0.85}$ quantum cascade structures centered at 3.4 and 4.9 THz with a line broadening of $Δf/f \approx 0.2$. Three strain-compensated heterostructures, grown on a Si substrate by ultrahigh vacuum chemical vapor deposition, have been investigated. The design is based on a single quantum well active region employing a vertical optical transition and the observed spectral features are well described by non-equilibrium Green's function calculations. The presence of two peaks highlights a suboptimal injection in the upper state of the radiative transition. Comparison of the electroluminescence spectra with similar GaAs/AlGaAs structure yields one order of magnitude lower emission efficiency. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2101_05518 |
| institution | arXiv |
| publishDate | 2021 |
| record_format | arxiv |
| spellingShingle | THz intersubband electroluminescence from n-type Ge/SiGe quantum cascade structures Stark, David Mirza, Muhammad Persichetti, Luca Montanari, Michele Markmann, Sergej Beck, Mattias Grange, Thomas Birner, Stefan Virgilio, Michele Ciano, Chiara Ortolani, Michele Corley, Cedric Capellini, Giovanni Di Gaspare, Luciana De Seta, Monica Paul, Douglas J. Faist, Jérôme Scalari, Giacomo Optics Applied Physics We report electroluminescence originating from L-valley transitions in n-type Ge/Si$_{0.15}$Ge$_{0.85}$ quantum cascade structures centered at 3.4 and 4.9 THz with a line broadening of $Δf/f \approx 0.2$. Three strain-compensated heterostructures, grown on a Si substrate by ultrahigh vacuum chemical vapor deposition, have been investigated. The design is based on a single quantum well active region employing a vertical optical transition and the observed spectral features are well described by non-equilibrium Green's function calculations. The presence of two peaks highlights a suboptimal injection in the upper state of the radiative transition. Comparison of the electroluminescence spectra with similar GaAs/AlGaAs structure yields one order of magnitude lower emission efficiency. |
| title | THz intersubband electroluminescence from n-type Ge/SiGe quantum cascade structures |
| topic | Optics Applied Physics |
| url | https://arxiv.org/abs/2101.05518 |