Formation of Ultra-High-Resistance Au/Ti/p-GaN Junctions and the Applications in AlGaN/GaN HEMTs
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arXiv
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| Autori principali: | , , , , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2021
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| _version_ | 1866909221146066944 |
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| author | Zhou, Guangnan Jiang, Yang Yang, Gaiying Wang, Qing Fan, Mengya Jiang, Lingli Yu, Hongyu Xia, Guangrui |
| author_facet | Zhou, Guangnan Jiang, Yang Yang, Gaiying Wang, Qing Fan, Mengya Jiang, Lingli Yu, Hongyu Xia, Guangrui |
| contents | We report a dramatic current reduction, or a resistance increase, by a few orders of magnitude of two common-anode Au/Ti/pGaN Schottky junctions annealed within a certain annealing condition window (600 - 700 oC, 1 - 4 min). Results from similar common-anode Schottky junctions made of Au/p-GaN, Al/Ti/p-GaN and Au/Ti/graphene/p-GaN junctions demonstrated that all the three layers (Au, Ti and p-GaN) are essential for the increased resistance. Raman characterization of the p-GaN showed a decrease of the Mg-N bonding, i.e., the deactivation of Mg, which is consistent with the Hall measurement results. Moreover, this high-resistance junction structure was employed in p-GaN gate AlGaN/GaN HEMTs. It was shown to be an effective gate technology that was capable to boost the gate breakdown voltage from 9.9 V to 13.8 V with a negligible effect on the threshold voltage or the sub-threshold slope. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2102_03418 |
| institution | arXiv |
| publishDate | 2021 |
| record_format | arxiv |
| spellingShingle | Formation of Ultra-High-Resistance Au/Ti/p-GaN Junctions and the Applications in AlGaN/GaN HEMTs Zhou, Guangnan Jiang, Yang Yang, Gaiying Wang, Qing Fan, Mengya Jiang, Lingli Yu, Hongyu Xia, Guangrui Materials Science We report a dramatic current reduction, or a resistance increase, by a few orders of magnitude of two common-anode Au/Ti/pGaN Schottky junctions annealed within a certain annealing condition window (600 - 700 oC, 1 - 4 min). Results from similar common-anode Schottky junctions made of Au/p-GaN, Al/Ti/p-GaN and Au/Ti/graphene/p-GaN junctions demonstrated that all the three layers (Au, Ti and p-GaN) are essential for the increased resistance. Raman characterization of the p-GaN showed a decrease of the Mg-N bonding, i.e., the deactivation of Mg, which is consistent with the Hall measurement results. Moreover, this high-resistance junction structure was employed in p-GaN gate AlGaN/GaN HEMTs. It was shown to be an effective gate technology that was capable to boost the gate breakdown voltage from 9.9 V to 13.8 V with a negligible effect on the threshold voltage or the sub-threshold slope. |
| title | Formation of Ultra-High-Resistance Au/Ti/p-GaN Junctions and the Applications in AlGaN/GaN HEMTs |
| topic | Materials Science |
| url | https://arxiv.org/abs/2102.03418 |