Tunable ferroelectricity in hBN intercalated twisted double-layer graphene

Fuente: arXiv
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Autores principales: Wang, Yibo, Jiang, Siqi, Xiao, Jingkuan, Cai, Xiaofan, Zhang, Di, Wang, Ping, Ma, Guodong, Han, Yaqing, Huang, Jiabei, Watanabe, Kenji, Taniguchi, Takashi, Mayorov, Alexander S., Yu, Geliang
Formato: Preprint
Publicado: 2021
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author Wang, Yibo
Jiang, Siqi
Xiao, Jingkuan
Cai, Xiaofan
Zhang, Di
Wang, Ping
Ma, Guodong
Han, Yaqing
Huang, Jiabei
Watanabe, Kenji
Taniguchi, Takashi
Mayorov, Alexander S.
Yu, Geliang
author_facet Wang, Yibo
Jiang, Siqi
Xiao, Jingkuan
Cai, Xiaofan
Zhang, Di
Wang, Ping
Ma, Guodong
Han, Yaqing
Huang, Jiabei
Watanabe, Kenji
Taniguchi, Takashi
Mayorov, Alexander S.
Yu, Geliang
contents Van der Waals (vdW) assembly of two-dimensional materials has been long recognized as a powerful tool to create unique systems with properties that cannot be found in natural compounds. However, among the variety of vdW heterostructures and their various properties, only a few have revealed metallic and ferroelectric behaviour signatures. Here we show ferroelectric semimetal made of double-gated double-layer graphene separated by an atomically thin crystal of hexagonal boron nitride, which demonstrating high room temperature mobility of the order of 10 m$^2$V$^{-1}$s$^{-1}$ and exhibits robust ambipolar switching in response to the external electric field. The observed hysteresis is tunable, reversible and persists above room temperature. Our fabrication method expands the family of ferroelectric vdW compounds and offers a route for developing novel phase-changing devices.
format Preprint
id arxiv_https___arxiv_org_abs_2102_12398
institution arXiv
publishDate 2021
record_format arxiv
spellingShingle Tunable ferroelectricity in hBN intercalated twisted double-layer graphene
Wang, Yibo
Jiang, Siqi
Xiao, Jingkuan
Cai, Xiaofan
Zhang, Di
Wang, Ping
Ma, Guodong
Han, Yaqing
Huang, Jiabei
Watanabe, Kenji
Taniguchi, Takashi
Mayorov, Alexander S.
Yu, Geliang
Mesoscale and Nanoscale Physics
Materials Science
Van der Waals (vdW) assembly of two-dimensional materials has been long recognized as a powerful tool to create unique systems with properties that cannot be found in natural compounds. However, among the variety of vdW heterostructures and their various properties, only a few have revealed metallic and ferroelectric behaviour signatures. Here we show ferroelectric semimetal made of double-gated double-layer graphene separated by an atomically thin crystal of hexagonal boron nitride, which demonstrating high room temperature mobility of the order of 10 m$^2$V$^{-1}$s$^{-1}$ and exhibits robust ambipolar switching in response to the external electric field. The observed hysteresis is tunable, reversible and persists above room temperature. Our fabrication method expands the family of ferroelectric vdW compounds and offers a route for developing novel phase-changing devices.
title Tunable ferroelectricity in hBN intercalated twisted double-layer graphene
topic Mesoscale and Nanoscale Physics
Materials Science
url https://arxiv.org/abs/2102.12398