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| Main Authors: | , , , , , , , , , , , |
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| Format: | Preprint |
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2021
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2103.06553 |
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| _version_ | 1866914913713127424 |
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| author | Wen, Chenhaoping Gao, Jingjing Xie, Yuan Zhang, Qing Kong, Pengfei Wang, Jinghui Jiang, Yilan Luo, Xuan Li, Jun Lu, Wenjian Sun, Yu-Ping Yan, Shichao |
| author_facet | Wen, Chenhaoping Gao, Jingjing Xie, Yuan Zhang, Qing Kong, Pengfei Wang, Jinghui Jiang, Yilan Luo, Xuan Li, Jun Lu, Wenjian Sun, Yu-Ping Yan, Shichao |
| contents | Here we use low-temperature scanning tunneling microscopy and spectroscopy (STM/STS) to reveal the roles of the narrow electronic band in two 1T-TaS$_2$-related materials (bulk 1T-TaS$_2$ and 4Hb-TaS$_2$). 4Hb-TaS$_2$ is a superconducting compound with alternating 1T-TaS$_2$ and 1H-TaS$_2$ layers, where the 1H-TaS$_2$ layer has weak charge density wave (CDW) pattern and reduces the CDW coupling between the adjacent 1T-TaS$_2$ layers. In the 1T-TaS$_2$ layer of 4Hb-TaS$_2$, we observe a narrow electronic band located near Fermi level, and its spatial distribution is consistent with the tight-binding calculations for two-dimensional 1T-TaS$_2$ layers. The weak electronic hybridization between the 1T-TaS$_2$ and 1H-TaS$_2$ layers in 4Hb-TaS$_2$ shifts the narrow electronic band to be slightly above the Fermi level, which suppresses the electronic correlation induced band splitting. In contrast, in bulk 1T-TaS$_2$, there is an interlayer CDW coupling induced insulating gap. In comparison with the spatial distributions of the electronic states in bulk 1T-TaS$_2$ and 4Hb-TaS$_2$, the insulating gap in bulk 1T-TaS$_2$ results from the formation of a bonding band and an antibonding band due to the overlap of the narrow electronic bands in the dimerized 1T-TaS$_2$ layers. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2103_06553 |
| institution | arXiv |
| publishDate | 2021 |
| record_format | arxiv |
| spellingShingle | Roles of the Narrow Electronic Band near the Fermi Level in 1T-TaS$_2$-Related Layered Materials Wen, Chenhaoping Gao, Jingjing Xie, Yuan Zhang, Qing Kong, Pengfei Wang, Jinghui Jiang, Yilan Luo, Xuan Li, Jun Lu, Wenjian Sun, Yu-Ping Yan, Shichao Mesoscale and Nanoscale Physics Materials Science Here we use low-temperature scanning tunneling microscopy and spectroscopy (STM/STS) to reveal the roles of the narrow electronic band in two 1T-TaS$_2$-related materials (bulk 1T-TaS$_2$ and 4Hb-TaS$_2$). 4Hb-TaS$_2$ is a superconducting compound with alternating 1T-TaS$_2$ and 1H-TaS$_2$ layers, where the 1H-TaS$_2$ layer has weak charge density wave (CDW) pattern and reduces the CDW coupling between the adjacent 1T-TaS$_2$ layers. In the 1T-TaS$_2$ layer of 4Hb-TaS$_2$, we observe a narrow electronic band located near Fermi level, and its spatial distribution is consistent with the tight-binding calculations for two-dimensional 1T-TaS$_2$ layers. The weak electronic hybridization between the 1T-TaS$_2$ and 1H-TaS$_2$ layers in 4Hb-TaS$_2$ shifts the narrow electronic band to be slightly above the Fermi level, which suppresses the electronic correlation induced band splitting. In contrast, in bulk 1T-TaS$_2$, there is an interlayer CDW coupling induced insulating gap. In comparison with the spatial distributions of the electronic states in bulk 1T-TaS$_2$ and 4Hb-TaS$_2$, the insulating gap in bulk 1T-TaS$_2$ results from the formation of a bonding band and an antibonding band due to the overlap of the narrow electronic bands in the dimerized 1T-TaS$_2$ layers. |
| title | Roles of the Narrow Electronic Band near the Fermi Level in 1T-TaS$_2$-Related Layered Materials |
| topic | Mesoscale and Nanoscale Physics Materials Science |
| url | https://arxiv.org/abs/2103.06553 |