Depinning of the Charge-Density Waves in Quasi-2D 1T-TaS2 Devices Operating at Room Temperature
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arXiv
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2021
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| author | Mohammadzadeh, A. Rehman, A. Kargar, F. Rumyantsev, S. Smulko, J. M. Knap, W. Lake, R. K. Balandin, A. A. |
| author_facet | Mohammadzadeh, A. Rehman, A. Kargar, F. Rumyantsev, S. Smulko, J. M. Knap, W. Lake, R. K. Balandin, A. A. |
| contents | We report on depinning of nearly-commensurate charge-density waves in 1T-TaS2 thin-films at room temperature. A combination of the differential current-voltage measurements with the low-frequency noise spectroscopy provide unambiguous means for detecting the depinning threshold field in quasi-2D materials. The depinning process in 1T-TaS2 is not accompanied by an observable abrupt increase in electric current - in striking contrast to depinning in the conventional charge-density-wave materials with quasi-1D crystal structure. We explained it by the fact that the current density from the charge-density waves in the 1T-TaS2 devices is orders of magnitude smaller than the current density of the free carriers available in the discommensuration network surrounding the commensurate charge-density-wave islands. The depinning fields in 1T-TaS2 thin-film devices are several orders of magnitude larger than those in quasi-1D van der Waals materials. Obtained results are important for the proposed applications of the charge-density-wave devices in electronics. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2104_14051 |
| institution | arXiv |
| publishDate | 2021 |
| record_format | arxiv |
| spellingShingle | Depinning of the Charge-Density Waves in Quasi-2D 1T-TaS2 Devices Operating at Room Temperature Mohammadzadeh, A. Rehman, A. Kargar, F. Rumyantsev, S. Smulko, J. M. Knap, W. Lake, R. K. Balandin, A. A. Mesoscale and Nanoscale Physics Strongly Correlated Electrons Quantum Physics We report on depinning of nearly-commensurate charge-density waves in 1T-TaS2 thin-films at room temperature. A combination of the differential current-voltage measurements with the low-frequency noise spectroscopy provide unambiguous means for detecting the depinning threshold field in quasi-2D materials. The depinning process in 1T-TaS2 is not accompanied by an observable abrupt increase in electric current - in striking contrast to depinning in the conventional charge-density-wave materials with quasi-1D crystal structure. We explained it by the fact that the current density from the charge-density waves in the 1T-TaS2 devices is orders of magnitude smaller than the current density of the free carriers available in the discommensuration network surrounding the commensurate charge-density-wave islands. The depinning fields in 1T-TaS2 thin-film devices are several orders of magnitude larger than those in quasi-1D van der Waals materials. Obtained results are important for the proposed applications of the charge-density-wave devices in electronics. |
| title | Depinning of the Charge-Density Waves in Quasi-2D 1T-TaS2 Devices Operating at Room Temperature |
| topic | Mesoscale and Nanoscale Physics Strongly Correlated Electrons Quantum Physics |
| url | https://arxiv.org/abs/2104.14051 |