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Lattice contraction induced by resistive switching in chromium-doped V2O3: a hallmark of Mott physics

Fuente: arXiv

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Auteurs principaux:	Babich, D., Tranchant, J., Adda, C., Corraze, B., Besland, M. -P., Warnicke, P., Bedau, D., Bertoncini, P., Mevellec, J. -Y., Humbert, B., Rupp, J., Hennen, T., Wouters, D., Llopis, R., Cario, L., Janod, E.
Format:	Preprint
Publié:	2021
Sujets:	Strongly Correlated Electrons Materials Science
Accès en ligne:	Acceder al recurso
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_version_	1866915558817005568
author	Babich, D. Tranchant, J. Adda, C. Corraze, B. Besland, M. -P. Warnicke, P. Bedau, D. Bertoncini, P. Mevellec, J. -Y. Humbert, B. Rupp, J. Hennen, T. Wouters, D. Llopis, R. Cario, L. Janod, E.
author_facet	Babich, D. Tranchant, J. Adda, C. Corraze, B. Besland, M. -P. Warnicke, P. Bedau, D. Bertoncini, P. Mevellec, J. -Y. Humbert, B. Rupp, J. Hennen, T. Wouters, D. Llopis, R. Cario, L. Janod, E.
contents	Since the beginnings of the electronic age, a quest for ever faster and smaller switches has been initiated, since this element is ubiquitous and foundational in any electronic circuit to regulate the flow of current. Mott insulators are promising candidates to meet this need as they undergo extremely fast resistive switching under electric field. However the mechanism of this transition is still under debate. Our spatially-resolved μ-XRD imaging experiments carried out on the prototypal Mott insulator (V0.95Cr0.05)2O3 show that the resistive switching is associated with the creation of a conducting filamentary path consisting in an isostructural compressed phase without any chemical nor symmetry change. This clearly evidences that the resistive switching mechanism is inherited from the bandwidth-controlled Mott transition. This discovery might hence ease the development of a new branch of electronics dubbed Mottronics.
format	Preprint
id	arxiv_https___arxiv_org_abs_2105_05093
institution	arXiv
publishDate	2021
record_format	arxiv
spellingShingle	Lattice contraction induced by resistive switching in chromium-doped V2O3: a hallmark of Mott physics Babich, D. Tranchant, J. Adda, C. Corraze, B. Besland, M. -P. Warnicke, P. Bedau, D. Bertoncini, P. Mevellec, J. -Y. Humbert, B. Rupp, J. Hennen, T. Wouters, D. Llopis, R. Cario, L. Janod, E. Strongly Correlated Electrons Materials Science Since the beginnings of the electronic age, a quest for ever faster and smaller switches has been initiated, since this element is ubiquitous and foundational in any electronic circuit to regulate the flow of current. Mott insulators are promising candidates to meet this need as they undergo extremely fast resistive switching under electric field. However the mechanism of this transition is still under debate. Our spatially-resolved μ-XRD imaging experiments carried out on the prototypal Mott insulator (V0.95Cr0.05)2O3 show that the resistive switching is associated with the creation of a conducting filamentary path consisting in an isostructural compressed phase without any chemical nor symmetry change. This clearly evidences that the resistive switching mechanism is inherited from the bandwidth-controlled Mott transition. This discovery might hence ease the development of a new branch of electronics dubbed Mottronics.
title	Lattice contraction induced by resistive switching in chromium-doped V2O3: a hallmark of Mott physics
topic	Strongly Correlated Electrons Materials Science
url	https://arxiv.org/abs/2105.05093