Copertina

Planar and 3-dimensional damage free etching of $β$-Ga2O3 using atomic gallium flux

Fuente: arXiv

Salvato in:

Dettagli Bibliografici
Autori principali:	Kalarickal, Nidhin Kurian, Fiedler, Andreas, Dhara, Sushovan, Rahman, Mohammad Wahidur, Kim, Taeyoung, Xia, Zhanbo, Eddine, Zane Jamal, Dheenan, Ashok, Brenner, Mark, Rajan, Siddharth
Natura:	Preprint
Pubblicazione:	2021
Soggetti:	Materials Science Applied Physics
Accesso online:	Acceder al recurso
Tags:	Aggiungi Tag Nessun Tag, puoi essere il primo ad aggiungerne!!

Documenti analoghi

>3kV NiO/Ga2O3 Heterojunction Diodes with Space-Modulated Junction Termination Extension and Sub-1V Turn-on
di: Gilankar, Advait, et al.
Pubblicazione: (2024)

Enhanced UV–Vis Rejection Ratio in Metal/BaTiO3/β‐Ga2O3 Solar‐Blind Photodetectors
di: Nathan Wriedt, et al.
Pubblicazione: (2024)

In-situ Patterned Damage-Free Etching of 3-Dimensional Structures in \b{eta}-Ga2O3 using Triethylgallium
di: Das, Nabasindhu, et al.
Pubblicazione: (2024)

Electrical and Structural Properties of In-Situ MOCVD Grown Al$_2$O$_3$/$β$-Ga$_2$O$_3$ and Al$_2$O$_3$/$β$-(Al$_x$Ga$_{1-x}$)$_2$O$_3$ MOSCAPs
di: Bhuiyan, A F M Anhar Uddin, et al.
Pubblicazione: (2025)

Tunnel Junction-Enabled Monolithically Integrated GaN Micro-Light Emitting Transistor
di: Rahman, Sheikh Ifatur, et al.
Pubblicazione: (2024)

Beta-Ga2O3 Sub-Micron FinFETs with Si Delta-Doped Channel Modulating Charge Density Above 3x10^13 cm^-2
di: Das, Nabasindhu, et al.
Pubblicazione: (2025)

Demonstration of KV-Class \b{eta}-Ga2O3 Trench Junction Barrier Schottky Diodes with SpaceModulated Junction Termination Extension
di: Gilankar, Advait, et al.
Pubblicazione: (2025)

Local Electric Field Measurement in GaN Diodes by exciton Franz-Keldysh Photocurrent Spectroscopy
di: Verma, Darpan, et al.
Pubblicazione: (2020)

Temperature Dependent Characteristics of Quasi-vertical AlN Schottky Diodes on Bulk AlN Substrate
di: Hamid, Md Abdul, et al.
Pubblicazione: (2026)

The Role of AI in Modern Business Communication
di: Wahidur Rahman
Pubblicazione: (2025)

Selective-injection GaN Heterojunction Bipolar Transistors with 275 kA/cm$^2$ Current Density
di: Xia, Zhanbo, et al.
Pubblicazione: (2024)

Orientation-dependent surface radiation damage in $β$-Ga2O3 explored by multiscale atomic simulations
di: Liu, Taiqiao, et al.
Pubblicazione: (2024)

LPCVD based Plasma Damage Free in situ etching of $β$-Ga$_2$O$_3$ using Solid Source Gallium
di: Khan, Saleh Ahmed, et al.
Pubblicazione: (2025)

Atomic layer etching of InGaAs using sequential exposures of atomic hydrogen and oxygen gas
di: Bayrak, Mete M., et al.
Pubblicazione: (2025)

Educación en medios ante la brecha digital en los países del Sur
di: Jamal Eddine Naji
Pubblicazione: (2009)

Anisotropic implantation damage build-up and crystal recovery in $β$-Ga$_2$O$_3$
di: Esteves, Duarte Magalhães, et al.
Pubblicazione: (2026)

A Fast and Efficient Modern BERT based Text-Conditioned Diffusion Model for Medical Image Segmentation
di: Dhara, Venkata Siddharth, et al.
Pubblicazione: (2025)

Non-traumatic myositis ossificans
di: Nidhin Rehman
Pubblicazione: (2021)

Metastatic gallbladder carcinoma presenting as an ovarian mass
di: Nidhin Rehman
Pubblicazione: (2021)

Demystifying Latschev's Theorem: Manifold Reconstruction from Noisy Data
di: Majhi, Sushovan
Pubblicazione: (2023)

Axial $w$-modes of anisotropic neutron stars
di: Mondal, Sushovan
Pubblicazione: (2026)

Sparse Random-Feature Neural Networks with Krylov-Based SVD for Singularly Perturbed ODE
di: Vaidyan, Kevin Kurian Thomas, et al.
Pubblicazione: (2026)

Superconductivity of alpha-gallium probed on the atomic scale by normal and Josephson tunneling
di: Fohn, C., et al.
Pubblicazione: (2024)

BeDAViN Sound Events Dataset for Audio-Visual Embodied Navigation
di: Shi, Zhanbo
Pubblicazione: (2025)

Letter: Amino Acid Imbalance Is an Independent Factor for Mortality in Patients With Liver Cirrhosis
di: Zhanbo Qu
Pubblicazione: (2026)

In situ etching of \b{eta}-Ga2O3 using tert-butyl chloride in an MOCVD system
di: Gorsak, Cameron A., et al.
Pubblicazione: (2024)

A novel intralamellar semi‐bioresorbable keratoprosthesis—Part A: Design conception, material perspective, and device manufacturing
di: Krishna Chaitanya Sunka, et al.
Pubblicazione: (2024)

GaAs quantum dots grown by droplet etching epitaxy as quantum light sources
di: da Silva, Saimon Filipe Covre, et al.
Pubblicazione: (2021)

Polarization‐Induced Versus Delta‐Doped β‐Ga2O3 HEMTs—A Performance Comparison
di: Rajan Singh, et al.
Pubblicazione: (2025)

High-performance magnetostatic wave resonators through deep anisotropic etching of GGG substrates
di: Tiwari, Sudhanshu, et al.
Pubblicazione: (2024)

Energy Bands and Breakdown Characteristics in Al2O3/UWBG AlGaN Heterostructures
di: Shin, Seungheon, et al.
Pubblicazione: (2025)

The case of the missing gallium vacancy in gallium arsenide: A multiscale explanation
di: Diaz, Leopoldo, et al.
Pubblicazione: (2025)

Progresses and Frontiers in Ultrawide Bandgap Semiconductors
di: Siddharth Rajan, et al.
Pubblicazione: (2025)

Progresses and Frontiers in Ultrawide Bandgap Semiconductors
di: Xiaohang Li, et al.
Pubblicazione: (2024)

Improving the lifetime of aluminum-based superconducting qubits through atomic layer etching and deposition
di: Mahuli, Neha, et al.
Pubblicazione: (2025)

Impact of Quantum Well Thickness on Efficiency Loss in InGaN/GaN LEDs: Challenges for Thin-Well Designs
di: Li, Xuefeng, et al.
Pubblicazione: (2025)

A stochastic simulation of the dislocation-mediated etching of porous GaN distributed Bragg reflectors
di: Sokolinski, Piotr, et al.
Pubblicazione: (2026)

A cascade model for the defect-driven etching of porous GaN distributed Bragg reflectors
di: Thornley, Ben, et al.
Pubblicazione: (2025)

How much gallium do we need for a p-type Cu(In,Ga)Se2?
di: Ramírez, Omar, et al.
Pubblicazione: (2022)

Choice of Connecting Rod Material for a Typical Four-Stroke Twin-Spark BS-VI Compliant DTS-i FI Engine
di: Subhayan Das and Sushovan Chatterjee
Pubblicazione: (2025)