Growth and characterization of quaternary-alloy ferromagnetic semiconductor (In,Ga,Fe)Sb
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arXiv
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| Autori principali: | , , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2021
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| _version_ | 1866910481305829376 |
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| author | Hotta, Tomoki Takase, Kengo Takiguchi, Kosuke Sriharsha, Karumuri Anh, Le Duc Tanaka, Masaaki |
| author_facet | Hotta, Tomoki Takase, Kengo Takiguchi, Kosuke Sriharsha, Karumuri Anh, Le Duc Tanaka, Masaaki |
| contents | We study the growth and properties of quaternary-alloy ferromagnetic semiconductor (FMS) (In0.94-x,Gax,Fe0.06)Sb (x = 5% - 30%, Fe concentration is fixed at 6%) grown by low temperature molecular beam epitaxy (LT-MBE).Reflection high-energy electron diffraction (RHEED) patterns, scanning transmission electron microscopy (STEM) lattice images, and X-ray diffraction (XRD) spectra indicate that the (In0.94-x,Gax,Fe0.06)Sb layers have a zinc-blende crystal structure without any other second phase. The lattice constant of the (In0.94-x,Gax,Fe0.06)Sb films changes linearly with the Ga concentration x, indicating that Ga atoms substitute In atoms in the zinc-blend structure. We found that the carrier type of can be systematically controlled by varying x, being n-type when x \le 10% and p-type when x \ge 20%. Characterizations using magnetic circular dichroism (MCD) spectroscopy indicate that the (In0.94-x,Gax,Fe0.06)Sb layers have intrinsic ferromagnetism with relatively high Curie temperatures (TC = 40 - 120 K). The ability to widely control the fundamental material properties (lattice constant, bandgap, carrier type, magnetic property) of (In0.94-x,Gax,Fe0.06)Sb demonstrated in this work is essential for spintronic device applications. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2106_00938 |
| institution | arXiv |
| publishDate | 2021 |
| record_format | arxiv |
| spellingShingle | Growth and characterization of quaternary-alloy ferromagnetic semiconductor (In,Ga,Fe)Sb Hotta, Tomoki Takase, Kengo Takiguchi, Kosuke Sriharsha, Karumuri Anh, Le Duc Tanaka, Masaaki Materials Science We study the growth and properties of quaternary-alloy ferromagnetic semiconductor (FMS) (In0.94-x,Gax,Fe0.06)Sb (x = 5% - 30%, Fe concentration is fixed at 6%) grown by low temperature molecular beam epitaxy (LT-MBE).Reflection high-energy electron diffraction (RHEED) patterns, scanning transmission electron microscopy (STEM) lattice images, and X-ray diffraction (XRD) spectra indicate that the (In0.94-x,Gax,Fe0.06)Sb layers have a zinc-blende crystal structure without any other second phase. The lattice constant of the (In0.94-x,Gax,Fe0.06)Sb films changes linearly with the Ga concentration x, indicating that Ga atoms substitute In atoms in the zinc-blend structure. We found that the carrier type of can be systematically controlled by varying x, being n-type when x \le 10% and p-type when x \ge 20%. Characterizations using magnetic circular dichroism (MCD) spectroscopy indicate that the (In0.94-x,Gax,Fe0.06)Sb layers have intrinsic ferromagnetism with relatively high Curie temperatures (TC = 40 - 120 K). The ability to widely control the fundamental material properties (lattice constant, bandgap, carrier type, magnetic property) of (In0.94-x,Gax,Fe0.06)Sb demonstrated in this work is essential for spintronic device applications. |
| title | Growth and characterization of quaternary-alloy ferromagnetic semiconductor (In,Ga,Fe)Sb |
| topic | Materials Science |
| url | https://arxiv.org/abs/2106.00938 |