Coherent epitaxy of trilayer nickelate (Nd0.8Sr0.2)4Ni3O10 films by high-pressure magnetron sputtering

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Hauptverfasser: Bi, Jiachang, Pei, Yujuan, Zhang, Ruyi, Peng, Shaoqin, Wang, Xinming, Sun, Jie, Feng, Jiagui, Yang, Jingkai, Cao, Yanwei
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Veröffentlicht: 2021
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author Bi, Jiachang
Pei, Yujuan
Zhang, Ruyi
Peng, Shaoqin
Wang, Xinming
Sun, Jie
Feng, Jiagui
Yang, Jingkai
Cao, Yanwei
author_facet Bi, Jiachang
Pei, Yujuan
Zhang, Ruyi
Peng, Shaoqin
Wang, Xinming
Sun, Jie
Feng, Jiagui
Yang, Jingkai
Cao, Yanwei
contents Rare-earth (R) nickelates (such as perovskite RNiO3, trilayer R4Ni3O10, and infinite layer RNiO2) have attracted tremendous interest very recently. However, unlike widely studied RNiO3 and RNiO2 films, the synthesis of trilayer nickelate R4Ni3O10 films is rarely reported. Here, single-crystalline (Nd0.8Sr0.2)4Ni3O10 epitaxial films were coherently grown on SrTiO3 substrates by high-pressure magnetron sputtering. The crystal and electronic structures of (Nd0.8Sr0.2)4Ni3O10 films were characterized by high-resolution X-ray diffraction and X-ray photoemission spectroscopy, respectively. The electrical transport measurements reveal a metal-insulator transition near 82 K and negative magnetoresistance in (Nd0.8Sr0.2)4Ni3O10 films. Our work provides a novel route to synthesize high-quality trilayer nickelate R4Ni3O10 films.
format Preprint
id arxiv_https___arxiv_org_abs_2106_03303
institution arXiv
publishDate 2021
record_format arxiv
spellingShingle Coherent epitaxy of trilayer nickelate (Nd0.8Sr0.2)4Ni3O10 films by high-pressure magnetron sputtering
Bi, Jiachang
Pei, Yujuan
Zhang, Ruyi
Peng, Shaoqin
Wang, Xinming
Sun, Jie
Feng, Jiagui
Yang, Jingkai
Cao, Yanwei
Materials Science
Rare-earth (R) nickelates (such as perovskite RNiO3, trilayer R4Ni3O10, and infinite layer RNiO2) have attracted tremendous interest very recently. However, unlike widely studied RNiO3 and RNiO2 films, the synthesis of trilayer nickelate R4Ni3O10 films is rarely reported. Here, single-crystalline (Nd0.8Sr0.2)4Ni3O10 epitaxial films were coherently grown on SrTiO3 substrates by high-pressure magnetron sputtering. The crystal and electronic structures of (Nd0.8Sr0.2)4Ni3O10 films were characterized by high-resolution X-ray diffraction and X-ray photoemission spectroscopy, respectively. The electrical transport measurements reveal a metal-insulator transition near 82 K and negative magnetoresistance in (Nd0.8Sr0.2)4Ni3O10 films. Our work provides a novel route to synthesize high-quality trilayer nickelate R4Ni3O10 films.
title Coherent epitaxy of trilayer nickelate (Nd0.8Sr0.2)4Ni3O10 films by high-pressure magnetron sputtering
topic Materials Science
url https://arxiv.org/abs/2106.03303