Angle-resolved optically detected magnetic resonance as a tool for strain determination in nanostructures

Fuente: arXiv
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Autori principali: Bogucki, A., Goryca, M., Łopion, A., Pacuski, W., Połczyńska, K. E., Domagała, J., Tokarczyk, M., Fąs, T., Golnik, A., Kossacki, P.
Natura: Preprint
Pubblicazione: 2021
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author Bogucki, A.
Goryca, M.
Łopion, A.
Pacuski, W.
Połczyńska, K. E.
Domagała, J.
Tokarczyk, M.
Fąs, T.
Golnik, A.
Kossacki, P.
author_facet Bogucki, A.
Goryca, M.
Łopion, A.
Pacuski, W.
Połczyńska, K. E.
Domagała, J.
Tokarczyk, M.
Fąs, T.
Golnik, A.
Kossacki, P.
contents In this paper, we apply the angle-resolved Optically Detected Magnetic Resonance (ODMR) technique to study series of strained (Cd, Mn)Te/(Cd, Mg)Te quantum wells (QWs) produced by molecular beam epitaxy. By analyzing characteristic features of ODMR angular scans, we determine strain-induced axial-symmetry spin Hamiltonian parameter D with neV precision. Furthermore, we use low-temperature optical reflectivity measurements and X-ray diffraction scans to evaluate the local strain present in QW material. In our analysis, we take into account different thermal expansion coefficients of GaAs substrate and CdTe buffer. The additional deformation due to the thermal expansion effects has the same magnitude as deformation origination from the different compositions of the samples. Based on the evaluated deformations and values of strain-induced axial-symmetry spin Hamiltonian parameter D, we find strain spin-lattice coefficient G11 = (72.2 +- 1.9) neV for Mn2+ in CdTe and shear deformation potential b = (-0.94 +- 0.11) eV for CdTe.
format Preprint
id arxiv_https___arxiv_org_abs_2106_06451
institution arXiv
publishDate 2021
record_format arxiv
spellingShingle Angle-resolved optically detected magnetic resonance as a tool for strain determination in nanostructures
Bogucki, A.
Goryca, M.
Łopion, A.
Pacuski, W.
Połczyńska, K. E.
Domagała, J.
Tokarczyk, M.
Fąs, T.
Golnik, A.
Kossacki, P.
Mesoscale and Nanoscale Physics
Materials Science
In this paper, we apply the angle-resolved Optically Detected Magnetic Resonance (ODMR) technique to study series of strained (Cd, Mn)Te/(Cd, Mg)Te quantum wells (QWs) produced by molecular beam epitaxy. By analyzing characteristic features of ODMR angular scans, we determine strain-induced axial-symmetry spin Hamiltonian parameter D with neV precision. Furthermore, we use low-temperature optical reflectivity measurements and X-ray diffraction scans to evaluate the local strain present in QW material. In our analysis, we take into account different thermal expansion coefficients of GaAs substrate and CdTe buffer. The additional deformation due to the thermal expansion effects has the same magnitude as deformation origination from the different compositions of the samples. Based on the evaluated deformations and values of strain-induced axial-symmetry spin Hamiltonian parameter D, we find strain spin-lattice coefficient G11 = (72.2 +- 1.9) neV for Mn2+ in CdTe and shear deformation potential b = (-0.94 +- 0.11) eV for CdTe.
title Angle-resolved optically detected magnetic resonance as a tool for strain determination in nanostructures
topic Mesoscale and Nanoscale Physics
Materials Science
url https://arxiv.org/abs/2106.06451