Electrical control of valley-Zeeman spin-orbit coupling-induced spin precession at room temperature

Fuente: arXiv
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Autores principales: Ingla-Aynés, Josep, Herling, Franz, Fabian, Jaroslav, Hueso, Luis E., Casanova, Fèlix
Formato: Preprint
Publicado: 2021
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author Ingla-Aynés, Josep
Herling, Franz
Fabian, Jaroslav
Hueso, Luis E.
Casanova, Fèlix
author_facet Ingla-Aynés, Josep
Herling, Franz
Fabian, Jaroslav
Hueso, Luis E.
Casanova, Fèlix
contents The ultimate goal of spintronics is achieving electrically controlled coherent manipulation of the electron spin at room temperature to enable devices such as spin field-effect transistors. With conventional materials, coherent spin precession has been observed in the ballistic regime and at low temperatures only. However, the strong spin anisotropy and the valley character of the electronic states in 2D materials provide unique control knobs to manipulate spin precession. Here, by manipulating the anisotropic spin-orbit coupling in bilayer graphene by the proximity effect to WSe$_2$, we achieve coherent spin precession in the absence of an external magnetic field, even in the diffusive regime. Remarkably, the sign of the precessing spin polarization can be tuned by a back gate voltage and by a drift current. Our realization of a spin field-effect transistor at room temperature is a cornerstone for the implementation of energy-efficient spin-based logic.
format Preprint
id arxiv_https___arxiv_org_abs_2106_14237
institution arXiv
publishDate 2021
record_format arxiv
spellingShingle Electrical control of valley-Zeeman spin-orbit coupling-induced spin precession at room temperature
Ingla-Aynés, Josep
Herling, Franz
Fabian, Jaroslav
Hueso, Luis E.
Casanova, Fèlix
Mesoscale and Nanoscale Physics
The ultimate goal of spintronics is achieving electrically controlled coherent manipulation of the electron spin at room temperature to enable devices such as spin field-effect transistors. With conventional materials, coherent spin precession has been observed in the ballistic regime and at low temperatures only. However, the strong spin anisotropy and the valley character of the electronic states in 2D materials provide unique control knobs to manipulate spin precession. Here, by manipulating the anisotropic spin-orbit coupling in bilayer graphene by the proximity effect to WSe$_2$, we achieve coherent spin precession in the absence of an external magnetic field, even in the diffusive regime. Remarkably, the sign of the precessing spin polarization can be tuned by a back gate voltage and by a drift current. Our realization of a spin field-effect transistor at room temperature is a cornerstone for the implementation of energy-efficient spin-based logic.
title Electrical control of valley-Zeeman spin-orbit coupling-induced spin precession at room temperature
topic Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2106.14237