Analytical Model for Gaussian Disorder Traps in Organic Thin-Film Transistor
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arXiv
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| Autores principales: | , , , , |
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| Formato: | Preprint |
| Publicado: |
2021
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| Materias: | |
| Acceso en línea: | |
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| _version_ | 1866916250608730112 |
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| author | Chen, Qiusong Sanchez, Juan E. Lin, Dong Lei, Yanlian Zhu, Guodong |
| author_facet | Chen, Qiusong Sanchez, Juan E. Lin, Dong Lei, Yanlian Zhu, Guodong |
| contents | Structural defects and chemical impurities exist in organic semiconductors acting as trap centers for the excited states. This work presents a novel analytical model to calculate the trapping and detrapping rates between two Gaussian density of states. Miller-Abrahams rate and Fermi-Dirac statistics are employed in this model. The introduction of effective filled and empty sites for correlated bands greatly simplifies the expression of recombination rate. A technology computer-aided design simulator was used to simulate the donor-like traps in an organic semiconductor DPP-DTT based thin-film transistor, showing good agreement with the measured transfer characteristic. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2106_15460 |
| institution | arXiv |
| publishDate | 2021 |
| record_format | arxiv |
| spellingShingle | Analytical Model for Gaussian Disorder Traps in Organic Thin-Film Transistor Chen, Qiusong Sanchez, Juan E. Lin, Dong Lei, Yanlian Zhu, Guodong Applied Physics Materials Science Structural defects and chemical impurities exist in organic semiconductors acting as trap centers for the excited states. This work presents a novel analytical model to calculate the trapping and detrapping rates between two Gaussian density of states. Miller-Abrahams rate and Fermi-Dirac statistics are employed in this model. The introduction of effective filled and empty sites for correlated bands greatly simplifies the expression of recombination rate. A technology computer-aided design simulator was used to simulate the donor-like traps in an organic semiconductor DPP-DTT based thin-film transistor, showing good agreement with the measured transfer characteristic. |
| title | Analytical Model for Gaussian Disorder Traps in Organic Thin-Film Transistor |
| topic | Applied Physics Materials Science |
| url | https://arxiv.org/abs/2106.15460 |