Ferroelectric Tunneling Junctions for Edge Computing
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arXiv
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| Auteurs principaux: | , , , , , , , , , , , , |
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| Format: | Preprint |
| Publié: |
2021
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| _version_ | 1866916117701722112 |
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| author | Covi, Erika Duong, Quang T. Lancaster, Suzanne Havel, Viktor Coignus, Jean Barbot, Justine Richter, Ole Klein, Philip Chicca, Elisabetta Grenouillet, Laurent Dimoulas, Athanasios Mikolajick, Thomas Slesazeck, Stefan |
| author_facet | Covi, Erika Duong, Quang T. Lancaster, Suzanne Havel, Viktor Coignus, Jean Barbot, Justine Richter, Ole Klein, Philip Chicca, Elisabetta Grenouillet, Laurent Dimoulas, Athanasios Mikolajick, Thomas Slesazeck, Stefan |
| contents | Ferroelectric tunneling junctions (FTJ) are considered to be the intrinsically most energy efficient memristors. In this work, specific electrical features of ferroelectric hafnium-zirconium oxide based FTJ devices are investigated. Moreover, the impact on the design of FTJ-based circuits for edge computing applications is discussed by means of two example circuits. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2107_01853 |
| institution | arXiv |
| publishDate | 2021 |
| record_format | arxiv |
| spellingShingle | Ferroelectric Tunneling Junctions for Edge Computing Covi, Erika Duong, Quang T. Lancaster, Suzanne Havel, Viktor Coignus, Jean Barbot, Justine Richter, Ole Klein, Philip Chicca, Elisabetta Grenouillet, Laurent Dimoulas, Athanasios Mikolajick, Thomas Slesazeck, Stefan Emerging Technologies Applied Physics Ferroelectric tunneling junctions (FTJ) are considered to be the intrinsically most energy efficient memristors. In this work, specific electrical features of ferroelectric hafnium-zirconium oxide based FTJ devices are investigated. Moreover, the impact on the design of FTJ-based circuits for edge computing applications is discussed by means of two example circuits. |
| title | Ferroelectric Tunneling Junctions for Edge Computing |
| topic | Emerging Technologies Applied Physics |
| url | https://arxiv.org/abs/2107.01853 |