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| Main Authors: | , , , , , , , , , , , , , , , , , , , |
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| Format: | Preprint |
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2021
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2108.08408 |
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| _version_ | 1866914964816527360 |
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| author | Ok, Jong Mok Mohanta, Narayan Zhang, Jie Yoon, Sangmoon Okamoto, Satoshi Choi, Eun Sang Zhou, Hua Briggeman, Megan Irvin, Patrick Lupini, Andrew R. Pai, Yun-Yi Skoropata, Elizabeth Sohn, Changhee Li, Haoxiang Miao, Hu Lawrie, Benjamin Choi, Woo Seok Eres, Gyula Levy, Jeremy Lee, Ho Nyung |
| author_facet | Ok, Jong Mok Mohanta, Narayan Zhang, Jie Yoon, Sangmoon Okamoto, Satoshi Choi, Eun Sang Zhou, Hua Briggeman, Megan Irvin, Patrick Lupini, Andrew R. Pai, Yun-Yi Skoropata, Elizabeth Sohn, Changhee Li, Haoxiang Miao, Hu Lawrie, Benjamin Choi, Woo Seok Eres, Gyula Levy, Jeremy Lee, Ho Nyung |
| contents | Quantum materials (QMs) with strong correlation and non-trivial topology are indispensable to next-generation information and computing technologies. Exploitation of topological band structure is an ideal starting point to realize correlated topological QMs. Herein, we report that strain-induced symmetry modification in correlated oxide SrNbO3 thin films creates an emerging topological band structure. Dirac electrons in strained SrNbO3 films reveal ultra-high mobility (100,000 cm2/Vs), exceptionally small effective mass (0.04me), and non-zero Berry phase. More importantly, strained SrNbO3 films reach the extreme quantum limit, exhibiting a sign of fractional occupation of Landau levels and giant mass enhancement. Our results suggest that symmetry-modified SrNbO3 is a rare example of a correlated topological QM, in which strong correlation of Dirac electrons leads to the realization of fractional occupation of Landau levels. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2108_08408 |
| institution | arXiv |
| publishDate | 2021 |
| record_format | arxiv |
| spellingShingle | Correlated Oxide Dirac Semimetal in the Extreme Quantum Limit Ok, Jong Mok Mohanta, Narayan Zhang, Jie Yoon, Sangmoon Okamoto, Satoshi Choi, Eun Sang Zhou, Hua Briggeman, Megan Irvin, Patrick Lupini, Andrew R. Pai, Yun-Yi Skoropata, Elizabeth Sohn, Changhee Li, Haoxiang Miao, Hu Lawrie, Benjamin Choi, Woo Seok Eres, Gyula Levy, Jeremy Lee, Ho Nyung Strongly Correlated Electrons Materials Science Quantum materials (QMs) with strong correlation and non-trivial topology are indispensable to next-generation information and computing technologies. Exploitation of topological band structure is an ideal starting point to realize correlated topological QMs. Herein, we report that strain-induced symmetry modification in correlated oxide SrNbO3 thin films creates an emerging topological band structure. Dirac electrons in strained SrNbO3 films reveal ultra-high mobility (100,000 cm2/Vs), exceptionally small effective mass (0.04me), and non-zero Berry phase. More importantly, strained SrNbO3 films reach the extreme quantum limit, exhibiting a sign of fractional occupation of Landau levels and giant mass enhancement. Our results suggest that symmetry-modified SrNbO3 is a rare example of a correlated topological QM, in which strong correlation of Dirac electrons leads to the realization of fractional occupation of Landau levels. |
| title | Correlated Oxide Dirac Semimetal in the Extreme Quantum Limit |
| topic | Strongly Correlated Electrons Materials Science |
| url | https://arxiv.org/abs/2108.08408 |