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Detalles Bibliográficos
Autores principales:	Ok, Jong Mok, Mohanta, Narayan, Zhang, Jie, Yoon, Sangmoon, Okamoto, Satoshi, Choi, Eun Sang, Zhou, Hua, Briggeman, Megan, Irvin, Patrick, Lupini, Andrew R., Pai, Yun-Yi, Skoropata, Elizabeth, Sohn, Changhee, Li, Haoxiang, Miao, Hu, Lawrie, Benjamin, Choi, Woo Seok, Eres, Gyula, Levy, Jeremy, Lee, Ho Nyung
Formato:	Preprint
Publicado:	2021
Materias:	Strongly Correlated Electrons Materials Science
Acceso en línea:	https://arxiv.org/abs/2108.08408
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

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Quantum materials (QMs) with strong correlation and non-trivial topology are indispensable to next-generation information and computing technologies. Exploitation of topological band structure is an ideal starting point to realize correlated topological QMs. Herein, we report that strain-induced symmetry modification in correlated oxide SrNbO3 thin films creates an emerging topological band structure. Dirac electrons in strained SrNbO3 films reveal ultra-high mobility (100,000 cm2/Vs), exceptionally small effective mass (0.04me), and non-zero Berry phase. More importantly, strained SrNbO3 films reach the extreme quantum limit, exhibiting a sign of fractional occupation of Landau levels and giant mass enhancement. Our results suggest that symmetry-modified SrNbO3 is a rare example of a correlated topological QM, in which strong correlation of Dirac electrons leads to the realization of fractional occupation of Landau levels.

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