Effect of Buffer Termination on Intermixing and Conductivity in LaTiO$_3$/SrTiO$_3$ Heterostructures Integrated on Si(100)
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| Main Authors: | , , , , , |
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| Format: | Preprint |
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2021
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| _version_ | 1866913395521880064 |
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| author | Chen, Tongjie Ahmadi-Majlan, Kamyar Lim, Zheng Hui Zhang, Zhan Ngai, Joseph H. Kumah, Divine . P. |
| author_facet | Chen, Tongjie Ahmadi-Majlan, Kamyar Lim, Zheng Hui Zhang, Zhan Ngai, Joseph H. Kumah, Divine . P. |
| contents | The control of chemical exchange across heterointerfaces formed between ultra-thin functional transition-metal oxide layers provides an effective route to manipulate the electronic properties of these systems. We show that cationic exchange across the interface between the Mott insulator, LaTiO$_3$(LTO) grown epitaxially on SrTiO$_3$(STO)-buffered Silicon by molecular beam epitaxy depends strongly on the surface termination of the strained STO buffer. Using a combination of temperature-dependent transport and synchrotron X-ray crystal truncation rods and reciprocal space mapping, an enhanced conductivity in STO/LTO/SrO- terminated STO buffers compared to heterostructures with TiO$_2$-terminated STO buffers is correlated with La/Sr exchange and the formation of metallic La$_{1-x}$Sr$_x$TiO$_3$. La/Sr exchange effectively reduces the strain energy of the system due to the large lattice mismatch between the nominal oxide layers and the Si substrate. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2109_08586 |
| institution | arXiv |
| publishDate | 2021 |
| record_format | arxiv |
| spellingShingle | Effect of Buffer Termination on Intermixing and Conductivity in LaTiO$_3$/SrTiO$_3$ Heterostructures Integrated on Si(100) Chen, Tongjie Ahmadi-Majlan, Kamyar Lim, Zheng Hui Zhang, Zhan Ngai, Joseph H. Kumah, Divine . P. Materials Science The control of chemical exchange across heterointerfaces formed between ultra-thin functional transition-metal oxide layers provides an effective route to manipulate the electronic properties of these systems. We show that cationic exchange across the interface between the Mott insulator, LaTiO$_3$(LTO) grown epitaxially on SrTiO$_3$(STO)-buffered Silicon by molecular beam epitaxy depends strongly on the surface termination of the strained STO buffer. Using a combination of temperature-dependent transport and synchrotron X-ray crystal truncation rods and reciprocal space mapping, an enhanced conductivity in STO/LTO/SrO- terminated STO buffers compared to heterostructures with TiO$_2$-terminated STO buffers is correlated with La/Sr exchange and the formation of metallic La$_{1-x}$Sr$_x$TiO$_3$. La/Sr exchange effectively reduces the strain energy of the system due to the large lattice mismatch between the nominal oxide layers and the Si substrate. |
| title | Effect of Buffer Termination on Intermixing and Conductivity in LaTiO$_3$/SrTiO$_3$ Heterostructures Integrated on Si(100) |
| topic | Materials Science |
| url | https://arxiv.org/abs/2109.08586 |