Effects of shallow carbon and deep N++ layer on the radiation hardness of IHEP-IME LGAD sensors

Fuente: arXiv
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Main Authors: Li, Mengzhao, Fan, Yunyun, Jia, Xuewei, Cui, Han, Liang, Zhijun, Zhao, Mei, Yang, Tao, Wu, Kewei, Li, Shuqi, Yu, Chengjun, Liu, Bo, Wang, Wei, Yang, Xuan, Tan, Yuhang, Shi, Xin, da Costa, J. G., Heng, Yuekun, Xu, Gaobo, Zhai, Qionghua, Yan, Gangping, Ding, Mingzheng, Luo, Jun, Yin, Huaxiang, Li, Junfeng, Howard, Alissa, Kramberger, Gregor
Format: Preprint
Published: 2021
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author Li, Mengzhao
Fan, Yunyun
Jia, Xuewei
Cui, Han
Liang, Zhijun
Zhao, Mei
Yang, Tao
Wu, Kewei
Li, Shuqi
Yu, Chengjun
Liu, Bo
Wang, Wei
Yang, Xuan
Tan, Yuhang
Shi, Xin
da Costa, J. G.
Heng, Yuekun
Xu, Gaobo
Zhai, Qionghua
Yan, Gangping
Ding, Mingzheng
Luo, Jun
Yin, Huaxiang
Li, Junfeng
Howard, Alissa
Kramberger, Gregor
author_facet Li, Mengzhao
Fan, Yunyun
Jia, Xuewei
Cui, Han
Liang, Zhijun
Zhao, Mei
Yang, Tao
Wu, Kewei
Li, Shuqi
Yu, Chengjun
Liu, Bo
Wang, Wei
Yang, Xuan
Tan, Yuhang
Shi, Xin
da Costa, J. G.
Heng, Yuekun
Xu, Gaobo
Zhai, Qionghua
Yan, Gangping
Ding, Mingzheng
Luo, Jun
Yin, Huaxiang
Li, Junfeng
Howard, Alissa
Kramberger, Gregor
contents Low Gain Avalanche Diode (LGAD) is applied for the High-Granularity Timing Detector (HGTD), and it will be used to upgrade the ATLAS experiment. The first batch IHEP-IME LGAD sensors were designed by the Institute of High Energy Physics (IHEP) and fabricated by the Institute of Microelectronics (IME). Three IHEP-IME sensors (W1, W7 and W8) were irradiated by the neutrons up to the fluence of 2.5 x 10^15 n_eq/cm^2 to study the effect of the shallow carbon and deep N++ layer on the irradiation hardness. Taking W7 as a reference, W1 has an extra shallow carbon applied, and W8 has a deeper N++ layer.
format Preprint
id arxiv_https___arxiv_org_abs_2110_12632
institution arXiv
publishDate 2021
record_format arxiv
spellingShingle Effects of shallow carbon and deep N++ layer on the radiation hardness of IHEP-IME LGAD sensors
Li, Mengzhao
Fan, Yunyun
Jia, Xuewei
Cui, Han
Liang, Zhijun
Zhao, Mei
Yang, Tao
Wu, Kewei
Li, Shuqi
Yu, Chengjun
Liu, Bo
Wang, Wei
Yang, Xuan
Tan, Yuhang
Shi, Xin
da Costa, J. G.
Heng, Yuekun
Xu, Gaobo
Zhai, Qionghua
Yan, Gangping
Ding, Mingzheng
Luo, Jun
Yin, Huaxiang
Li, Junfeng
Howard, Alissa
Kramberger, Gregor
Instrumentation and Detectors
High Energy Physics - Experiment
Low Gain Avalanche Diode (LGAD) is applied for the High-Granularity Timing Detector (HGTD), and it will be used to upgrade the ATLAS experiment. The first batch IHEP-IME LGAD sensors were designed by the Institute of High Energy Physics (IHEP) and fabricated by the Institute of Microelectronics (IME). Three IHEP-IME sensors (W1, W7 and W8) were irradiated by the neutrons up to the fluence of 2.5 x 10^15 n_eq/cm^2 to study the effect of the shallow carbon and deep N++ layer on the irradiation hardness. Taking W7 as a reference, W1 has an extra shallow carbon applied, and W8 has a deeper N++ layer.
title Effects of shallow carbon and deep N++ layer on the radiation hardness of IHEP-IME LGAD sensors
topic Instrumentation and Detectors
High Energy Physics - Experiment
url https://arxiv.org/abs/2110.12632