Epitaxial Sc$_x$Al$_{1-x}$N on GaN is a High K Dielectric
Fuente:
arXiv
Saved in:
| Main Authors: | Casamento, Joseph, Lee, Hyunjea, Maeda, Takuya, Gund, Ved, Nomoto, Kazuki, van Deurzen, Len, Lal, Amit, Huili, Xing, Jena, Debdeep |
|---|---|
| Format: | Preprint |
| Published: |
2021
|
| Subjects: | |
| Online Access: | |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
Epitaxial high-K AlBN barrier GaN HEMTs
by: Savant, Chandrashekhar, et al.
Published: (2025)
by: Savant, Chandrashekhar, et al.
Published: (2025)
Ferroelectric AlBN Films by Molecular Beam Epitaxy
by: Savant, Chandrashekhar, et al.
Published: (2024)
by: Savant, Chandrashekhar, et al.
Published: (2024)
Lattice-Matched Multiple Channel AlScN/GaN Heterostructures
by: Nguyen, Thai-Son, et al.
Published: (2024)
by: Nguyen, Thai-Son, et al.
Published: (2024)
Molecular Beam Homoepitaxy of N-polar AlN on bulk AlN substrates
by: Singhal, Jashan, et al.
Published: (2022)
by: Singhal, Jashan, et al.
Published: (2022)
Shubnikov-de Haas oscillations of two-dimensional electron gases in AlYN/GaN and AlScN/GaN heterostructures
by: Chen, Yu-Hsin, et al.
Published: (2026)
by: Chen, Yu-Hsin, et al.
Published: (2026)
High Mobility Multiple-Channel AlScN/GaN Heterostructures
by: Asteris, Aias, et al.
Published: (2025)
by: Asteris, Aias, et al.
Published: (2025)
Shubnikov-de Haas oscillations in coherently strained AlN/GaN/AlN quantum wells on bulk AlN substrates
by: Chen, Yu-Hsin, et al.
Published: (2025)
by: Chen, Yu-Hsin, et al.
Published: (2025)
Dependence of the Mn sticking coefficient on Ga-rich, N-rich, and Ga/N-flux-free conditions in GaN grown by plasma-assisted molecular beam epitaxy
by: Cho, YongJin, et al.
Published: (2026)
by: Cho, YongJin, et al.
Published: (2026)
Electrically Tunable Room‐Temperature Microwave Oscillations in GaN/AlN Triple‐Barrier Resonant Tunneling Diodes
by: Jimy Encomendero, et al.
Published: (2026)
by: Jimy Encomendero, et al.
Published: (2026)
The effect of boron incorporation on leakage and wake-up in ferroelectric Al_{1-x}Sc_xN
by: Gremmel, Maike, et al.
Published: (2025)
by: Gremmel, Maike, et al.
Published: (2025)
Epitaxial AlBN/β‐Nb2N Ferroelectric/Superconductor Heterostructures
by: Chandrashekhar Savant, et al.
Published: (2024)
by: Chandrashekhar Savant, et al.
Published: (2024)
Two-Carrier Model-Fitting of Hall Effect in Semiconductors with Dual-Band Occupation: A Case Study in GaN Two-Dimensional Hole Gas
by: Dill, Joseph E., et al.
Published: (2024)
by: Dill, Joseph E., et al.
Published: (2024)
Cryogenic Loss Limits in Microwave Epitaxial AlN Acoustic Resonators
by: Gulupalli, Hemant, et al.
Published: (2026)
by: Gulupalli, Hemant, et al.
Published: (2026)
Understanding Interfaces in AlScN/GaN Heterostructures
by: Isabel Streicher, et al.
Published: (2024)
by: Isabel Streicher, et al.
Published: (2024)
$γ$-phase Inclusions as Common Defects in Alloyed $β$-(Al$_x$Ga$_{1\text{-}x}$)$_2$O$_3$ and Doped $β$-Ga$_2$O$_3$ Films
by: Chang, Celesta S., et al.
Published: (2020)
by: Chang, Celesta S., et al.
Published: (2020)
First‐Principles Study of Structural, Elastic, and Piezoelectric Properties of Wurtzite Superlattice Sc x Al 1− x N, Sc x Ga 1− x N, and Sc x In 1− x N Alloys
by: Hang Cui, et al.
Published: (2026)
by: Hang Cui, et al.
Published: (2026)
Kilovolt Pyroelectric Voltage Generation and Electrostatic Actuation With Fluidic Heating
by: Ni, Di, et al.
Published: (2024)
by: Ni, Di, et al.
Published: (2024)
Metalorganic Chemical Vapor Deposition of AlScN Thin Films and AlScN/AlN/GaN Heterostructures
by: Vangipuram, Vijay Gopal Thirupakuzi, et al.
Published: (2025)
by: Vangipuram, Vijay Gopal Thirupakuzi, et al.
Published: (2025)
Interfacial Polarization Switching in Al0.92Sc0.08N/GaN Heterostructures Grown by Sputter Epitaxy
by: Wolff, Niklas, et al.
Published: (2025)
by: Wolff, Niklas, et al.
Published: (2025)
Interfacial Polarization Switching in Al 0.92 Sc 0.08 N/GaN Heterostructures Grown by Sputter Epitaxy
by: Niklas Wolff, et al.
Published: (2025)
by: Niklas Wolff, et al.
Published: (2025)
Quantum oscillations of holes in GaN
by: Chang, Chuan F. C., et al.
Published: (2025)
by: Chang, Chuan F. C., et al.
Published: (2025)
Low Resistance Non-Alloyed Ohmic Contacts to High Al Composition n-type AlGaN
by: Dill, Joseph E., et al.
Published: (2025)
by: Dill, Joseph E., et al.
Published: (2025)
Microwave Performance of all MOCVD-grown AlScN/GaN MIS-HEMTs on Semi-Insulating GaN Substrates
by: Cao, Can, et al.
Published: (2026)
by: Cao, Can, et al.
Published: (2026)
Significant impact of Al1-xGaxN interlayer on GaN/AlN thermal boundary conductance
by: Adnan, Khalid Zobaid, et al.
Published: (2026)
by: Adnan, Khalid Zobaid, et al.
Published: (2026)
Rashba Spin Splitting in the Al 0.6 Ga 0.4 N/GaN/Al 0.6 Ga 0.4 N Quantum Well With an Inserted Al x Ga 1 − x N Layer
by: An-Mei Wang, et al.
Published: (2025)
by: An-Mei Wang, et al.
Published: (2025)
Reliability Instability Assessment with Interfacial Trapping Analysis for the Optimization of Al Composition in AlxGa1−xN/GaN High Electron Mobility Transistors
by: Walid Amir, et al.
Published: (2024)
by: Walid Amir, et al.
Published: (2024)
Electrical Properties of N‐Polar GaN/AlGaN/AlN Grown via Metal‐Organic Vapor Phase Epitaxy
by: Aina Hiyama Zazuli, et al.
Published: (2024)
by: Aina Hiyama Zazuli, et al.
Published: (2024)
First-principles band alignment engineering in polar and nonpolar orientations for wurtzite AlN, GaN, and B$_x$Al$_{1-x}$N alloys
by: Milne, Cody L, et al.
Published: (2025)
by: Milne, Cody L, et al.
Published: (2025)
Molecular Beam Epitaxy of GaN Nanowires on Epitaxial Graphene
by: Fernández-Garrido, Sergio, et al.
Published: (2024)
by: Fernández-Garrido, Sergio, et al.
Published: (2024)
Advancing the Growth of GaN on AlScN and AlYN by Metal–Organic Chemical Vapor Deposition
by: Isabel Streicher, et al.
Published: (2025)
by: Isabel Streicher, et al.
Published: (2025)
XHEMTs on Ultrawide Bandgap Single-Crystal AlN Substrates
by: Kim, Eungkyun, et al.
Published: (2025)
by: Kim, Eungkyun, et al.
Published: (2025)
A Promising Ohmic Contacts Approach for High-Al AlxGa1-xN (x>0.6) Channel HEMTs with AlN/GaN Digital Alloy Channel
by: Jamil, Tariq, et al.
Published: (2026)
by: Jamil, Tariq, et al.
Published: (2026)
Diffusion of Acceptor Metal Impurities from Semi‐Insulating GaN into Undoped GaN Epitaxial Layers
by: Kenji Iso, et al.
Published: (2025)
by: Kenji Iso, et al.
Published: (2025)
Al 1‐x Sc x N‐Based Ferroelectric Domain‐Wall Memristors
by: Haidong Lu, et al.
Published: (2025)
by: Haidong Lu, et al.
Published: (2025)
Study of InxGa1-xN layers growth on GaN/Al2O3 by MOCVD at different pressures
by: C. Guarneros
Published: (2013)
by: C. Guarneros
Published: (2013)
Low Leakage Ferroelectric Heteroepitaxial Al$_{0.7}$Sc$_{0.3}$N Films on GaN
by: Yazawa, Keisuke, et al.
Published: (2024)
by: Yazawa, Keisuke, et al.
Published: (2024)
XHEMTs on Ultrawide Bandgap Single‐Crystal AlN Substrates (Adv. Electron. Mater. 3/2026)
by: Eungkyun Kim, et al.
Published: (2026)
by: Eungkyun Kim, et al.
Published: (2026)
Impact of Growth Temperature and Al/N Ratio on AlN Films Grown by Radio‐Frequency Molecular Beam Epitaxy on GaN Templates
by: Trang Nakamoto, et al.
Published: (2026)
by: Trang Nakamoto, et al.
Published: (2026)
Roles of Nanoscale Defects of Graphene in Remote Epitaxy of GaN
by: Jeongwoon Kim, et al.
Published: (2025)
by: Jeongwoon Kim, et al.
Published: (2025)
Molecular Beam Epitaxy of Al$\mathrm{_{1-x}}$Sc$\mathrm{_{x}}$N Nanowires: Towards Group-III Nitride Piezoelectric Nanogenerators with Enhanced Response
by: Notarangelo, Adriano, et al.
Published: (2026)
by: Notarangelo, Adriano, et al.
Published: (2026)
Similar Items
-
Epitaxial high-K AlBN barrier GaN HEMTs
by: Savant, Chandrashekhar, et al.
Published: (2025) -
Ferroelectric AlBN Films by Molecular Beam Epitaxy
by: Savant, Chandrashekhar, et al.
Published: (2024) -
Lattice-Matched Multiple Channel AlScN/GaN Heterostructures
by: Nguyen, Thai-Son, et al.
Published: (2024) -
Molecular Beam Homoepitaxy of N-polar AlN on bulk AlN substrates
by: Singhal, Jashan, et al.
Published: (2022) -
Shubnikov-de Haas oscillations of two-dimensional electron gases in AlYN/GaN and AlScN/GaN heterostructures
by: Chen, Yu-Hsin, et al.
Published: (2026)