Valley-resolved Fano resonance in monolayer transition metal dichalcogenides nanoribbons with attached stubs

Fuente: arXiv
Guardado en:
Detalles Bibliográficos
Autores principales: Mu, Hui-Ying, Wang, Nie-Wei, Du, Ying-Na, An, Xing-Tao, Liu, Jian-Jun
Formato: Preprint
Publicado: 2021
Materias:
Acceso en línea:
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
_version_ 1866913977851707392
author Mu, Hui-Ying
Wang, Nie-Wei
Du, Ying-Na
An, Xing-Tao
Liu, Jian-Jun
author_facet Mu, Hui-Ying
Wang, Nie-Wei
Du, Ying-Na
An, Xing-Tao
Liu, Jian-Jun
contents Valley degree of freedom besides spin is a promising candidate as a carrier of information. Spintronics has come a long way and spin modulation can be realized by quantum interference and spin-orbit coupling effect. However, the control of valley degree of freedom using quantum interference is still a problem to be explored. Here we discover a mechanism of producing valley polarization in a monolayer transition metal dichalcogenides nanoribbon with attached stubs, in which valley-resolved Fano resonance are formed due to the quantum interference of intervalley backscattering. When the quantum interference occurs between the localized states at the edge of the stubs and the continuous channels in the nanoribbon, the transmission dips of Fano effect is valley-polarized. As the number of stubs increases, the valley-polarized transmission dips will split and valley-resolved minigaps are formed by Fano resonance with intervalley backscattering in stub superlattice. When the electron incident energy is in these valley-resolved gaps of the superlattice, even with several stubs, the transmission can have a significant valley polarization. Our finding points to an opportunity to realize valley functionalities by quantum interference.
format Preprint
id arxiv_https___arxiv_org_abs_2111_03795
institution arXiv
publishDate 2021
record_format arxiv
spellingShingle Valley-resolved Fano resonance in monolayer transition metal dichalcogenides nanoribbons with attached stubs
Mu, Hui-Ying
Wang, Nie-Wei
Du, Ying-Na
An, Xing-Tao
Liu, Jian-Jun
Mesoscale and Nanoscale Physics
Valley degree of freedom besides spin is a promising candidate as a carrier of information. Spintronics has come a long way and spin modulation can be realized by quantum interference and spin-orbit coupling effect. However, the control of valley degree of freedom using quantum interference is still a problem to be explored. Here we discover a mechanism of producing valley polarization in a monolayer transition metal dichalcogenides nanoribbon with attached stubs, in which valley-resolved Fano resonance are formed due to the quantum interference of intervalley backscattering. When the quantum interference occurs between the localized states at the edge of the stubs and the continuous channels in the nanoribbon, the transmission dips of Fano effect is valley-polarized. As the number of stubs increases, the valley-polarized transmission dips will split and valley-resolved minigaps are formed by Fano resonance with intervalley backscattering in stub superlattice. When the electron incident energy is in these valley-resolved gaps of the superlattice, even with several stubs, the transmission can have a significant valley polarization. Our finding points to an opportunity to realize valley functionalities by quantum interference.
title Valley-resolved Fano resonance in monolayer transition metal dichalcogenides nanoribbons with attached stubs
topic Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2111.03795