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| Main Authors: | , , , , |
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| Format: | Preprint |
| Published: |
2021
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2111.07296 |
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| _version_ | 1866916291940450304 |
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| author | Li, Yanru Yang, Meiyin Yu, Guoqiang Cui, Baoshan Luo, Jun |
| author_facet | Li, Yanru Yang, Meiyin Yu, Guoqiang Cui, Baoshan Luo, Jun |
| contents | By means of local ion implantation, we investigated the influence of lateral interface on current-induced magnetic switching by spin-orbit torque in a perpendicularly magnetized Pt/Co/Ta multilayer. The experimental results show that, in this system, the domain wall motion under electrical current can be affected by two mechanisms: symmetry breaking and current-driven Néel wall motion at the lateral interface. The dominant mechanism is symmetry breaking (current-driven Néel wall motion) at the large (small) current. Due to the competitive relationship of these two mechanisms, the non-hysteresis effect magnetic switching without an external magnetic field is obtained. Based on the non-hysteresis effect magnetic switching, we can realize AND and OR logic gates without resetting. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2111_07296 |
| institution | arXiv |
| publishDate | 2021 |
| record_format | arxiv |
| spellingShingle | Current controlled non-hysteresis magnetic switching in the ansence of magnetic field Li, Yanru Yang, Meiyin Yu, Guoqiang Cui, Baoshan Luo, Jun Applied Physics By means of local ion implantation, we investigated the influence of lateral interface on current-induced magnetic switching by spin-orbit torque in a perpendicularly magnetized Pt/Co/Ta multilayer. The experimental results show that, in this system, the domain wall motion under electrical current can be affected by two mechanisms: symmetry breaking and current-driven Néel wall motion at the lateral interface. The dominant mechanism is symmetry breaking (current-driven Néel wall motion) at the large (small) current. Due to the competitive relationship of these two mechanisms, the non-hysteresis effect magnetic switching without an external magnetic field is obtained. Based on the non-hysteresis effect magnetic switching, we can realize AND and OR logic gates without resetting. |
| title | Current controlled non-hysteresis magnetic switching in the ansence of magnetic field |
| topic | Applied Physics |
| url | https://arxiv.org/abs/2111.07296 |