Three-dimensional imaging of integrated-circuit activity using quantum defects in diamond
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arXiv
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| Autores principales: | , , , , , , , , , , |
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| Formato: | Preprint |
| Publicado: |
2021
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| _version_ | 1866913386950819840 |
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| author | Garsi, Marwa Stöhr, Rainer Denisenko, Andrej Shagieva, Farida Trautmann, Nils Vogl, Ulrich Sene, Badou Kaiser, Florian Zappe, Andrea Reuter, Rolf Wrachtrup, Jörg |
| author_facet | Garsi, Marwa Stöhr, Rainer Denisenko, Andrej Shagieva, Farida Trautmann, Nils Vogl, Ulrich Sene, Badou Kaiser, Florian Zappe, Andrea Reuter, Rolf Wrachtrup, Jörg |
| contents | The continuous scaling of semiconductor-based technologies to micron and sub-micron regimes has resulted in higher device density and lower power dissipation. Many physical phenomena such as self-heating or current leakage become significant at such scales, and mapping current densities to reveal these features is decisive for the development of modern electronics. However, advanced non-invasive technologies either offer low sensitivity or poor spatial resolution and are limited to two-dimensional spatial mapping. Here we use near-surface nitrogen-vacancy centres in diamond to probe Oersted fields created by current flowing within a multi-layered integrated circuit in pre-development. We show the reconstruction of the three-dimensional components of the current density with a magnitude down to about $\approx 10 \,\rm μA / μm^2$ and sub-micron spatial resolution at room temperature. We also report the localisation of currents in different layers and observe anomalous current flow in an electronic chip. Our method provides, therefore a decisive step toward three-dimensional current mapping in technologically relevant nanoscale electronics chips. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2112_12242 |
| institution | arXiv |
| publishDate | 2021 |
| record_format | arxiv |
| spellingShingle | Three-dimensional imaging of integrated-circuit activity using quantum defects in diamond Garsi, Marwa Stöhr, Rainer Denisenko, Andrej Shagieva, Farida Trautmann, Nils Vogl, Ulrich Sene, Badou Kaiser, Florian Zappe, Andrea Reuter, Rolf Wrachtrup, Jörg Applied Physics Mesoscale and Nanoscale Physics Quantum Physics The continuous scaling of semiconductor-based technologies to micron and sub-micron regimes has resulted in higher device density and lower power dissipation. Many physical phenomena such as self-heating or current leakage become significant at such scales, and mapping current densities to reveal these features is decisive for the development of modern electronics. However, advanced non-invasive technologies either offer low sensitivity or poor spatial resolution and are limited to two-dimensional spatial mapping. Here we use near-surface nitrogen-vacancy centres in diamond to probe Oersted fields created by current flowing within a multi-layered integrated circuit in pre-development. We show the reconstruction of the three-dimensional components of the current density with a magnitude down to about $\approx 10 \,\rm μA / μm^2$ and sub-micron spatial resolution at room temperature. We also report the localisation of currents in different layers and observe anomalous current flow in an electronic chip. Our method provides, therefore a decisive step toward three-dimensional current mapping in technologically relevant nanoscale electronics chips. |
| title | Three-dimensional imaging of integrated-circuit activity using quantum defects in diamond |
| topic | Applied Physics Mesoscale and Nanoscale Physics Quantum Physics |
| url | https://arxiv.org/abs/2112.12242 |