Proposal for a Negative Capacitance Topological Quantum Field-Effect Transistor
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arXiv
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| Format: | Preprint |
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2022
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| _version_ | 1866917160861827072 |
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| author | Fuhrer, Michael S. Edmonds, Mark T. Culcer, Dimitrie Nadeem, Muhammad Wang, Xiaolin Medhekar, Nikhil Yin, Yuefeng Cole, Jared H |
| author_facet | Fuhrer, Michael S. Edmonds, Mark T. Culcer, Dimitrie Nadeem, Muhammad Wang, Xiaolin Medhekar, Nikhil Yin, Yuefeng Cole, Jared H |
| contents | A topological quantum field effect transistor (TQFET) uses electric field to switch a material from topological insulator ("on", with conducting edge states) to a conventional insulator ("off"), and can have low subthreshold swing due to strong Rashba spin-orbit interaction. Numerous materials have been proposed, and electric field switching has been demonstrated in ultrathin Na${_3}$Bi. Here we propose a negative capacitance (NC) TQFET which uses a ferroelectric to amplify the electric field and potentially achieve very low switching voltages and energies. Materials challenges for realizing the NC-TQFET are discussed. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2201_05288 |
| institution | arXiv |
| publishDate | 2022 |
| record_format | arxiv |
| spellingShingle | Proposal for a Negative Capacitance Topological Quantum Field-Effect Transistor Fuhrer, Michael S. Edmonds, Mark T. Culcer, Dimitrie Nadeem, Muhammad Wang, Xiaolin Medhekar, Nikhil Yin, Yuefeng Cole, Jared H Mesoscale and Nanoscale Physics A topological quantum field effect transistor (TQFET) uses electric field to switch a material from topological insulator ("on", with conducting edge states) to a conventional insulator ("off"), and can have low subthreshold swing due to strong Rashba spin-orbit interaction. Numerous materials have been proposed, and electric field switching has been demonstrated in ultrathin Na${_3}$Bi. Here we propose a negative capacitance (NC) TQFET which uses a ferroelectric to amplify the electric field and potentially achieve very low switching voltages and energies. Materials challenges for realizing the NC-TQFET are discussed. |
| title | Proposal for a Negative Capacitance Topological Quantum Field-Effect Transistor |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2201.05288 |