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| Hauptverfasser: | , , , , , , , , |
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| Format: | Preprint |
| Veröffentlicht: |
2022
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| Online-Zugang: | https://arxiv.org/abs/2202.01536 |
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| _version_ | 1866914052992663552 |
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| author | Kong, Deying Zhang, Yu Cheng, Dali Wang, Enze Zhang, Kaiyuan Wang, Huachun Liu, Kai Yin, Lan Sheng, Xing |
| author_facet | Kong, Deying Zhang, Yu Cheng, Dali Wang, Enze Zhang, Kaiyuan Wang, Huachun Liu, Kai Yin, Lan Sheng, Xing |
| contents | Lead halide perovskite materials have been emerging as promising candidates for high-performance optoelectronic devices. Significant efforts have sought to realize monocrystalline perovskite films at a large scale. Here, we epitaxially grow monocrystalline methylammonium lead tribromide (MAPbBr3) films on lattice-matched gallium arsenide (GaAs) substrates at a centimeter scale. In particular, a solution-processed lead(II) sulfide (PbS) layer provides a lattice-matched and chemical protective interface for the solid-gas reaction to form MAPbBr3 films on GaAs. Structure characterizations identify the crystal orientations in the trilayer MAPbBr3/PbS/GaAs epi-structure and confirm the monocrystalline nature of MAPbBr3 on PbS/GaAs. The dynamic evolution of surface morphologies during the growth indicates a two-step epitaxial process. These fundamental understandings and practical growth techniques offer a viable guideline to approach high-quality perovskite films for previously inaccessible applications. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2202_01536 |
| institution | arXiv |
| publishDate | 2022 |
| record_format | arxiv |
| spellingShingle | Heteroepitaxy of Large-Area, Monocrystalline Lead Halide Perovskite Films on Gallium Arsenide Kong, Deying Zhang, Yu Cheng, Dali Wang, Enze Zhang, Kaiyuan Wang, Huachun Liu, Kai Yin, Lan Sheng, Xing Applied Physics Materials Science Lead halide perovskite materials have been emerging as promising candidates for high-performance optoelectronic devices. Significant efforts have sought to realize monocrystalline perovskite films at a large scale. Here, we epitaxially grow monocrystalline methylammonium lead tribromide (MAPbBr3) films on lattice-matched gallium arsenide (GaAs) substrates at a centimeter scale. In particular, a solution-processed lead(II) sulfide (PbS) layer provides a lattice-matched and chemical protective interface for the solid-gas reaction to form MAPbBr3 films on GaAs. Structure characterizations identify the crystal orientations in the trilayer MAPbBr3/PbS/GaAs epi-structure and confirm the monocrystalline nature of MAPbBr3 on PbS/GaAs. The dynamic evolution of surface morphologies during the growth indicates a two-step epitaxial process. These fundamental understandings and practical growth techniques offer a viable guideline to approach high-quality perovskite films for previously inaccessible applications. |
| title | Heteroepitaxy of Large-Area, Monocrystalline Lead Halide Perovskite Films on Gallium Arsenide |
| topic | Applied Physics Materials Science |
| url | https://arxiv.org/abs/2202.01536 |