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Towards controllable Si-doping in oxide molecular beam epitaxy using a solid SiO source: Application to $β$-Ga2O3

Fuente: arXiv

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Detalles Bibliográficos
Autores principales:	Ardenghi, A., Bierwagen, O., Falkenstein, A., Hoffmann, G., Lähnemann, J., Martin, M., Mazzolini, P.
Formato:	Preprint
Publicado:	2022
Materias:	Materials Science Applied Physics
Acceso en línea:	Acceder al recurso
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

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