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Towards controllable Si-doping in oxide molecular beam epitaxy using a solid SiO source: Application to $β$-Ga2O3

Fuente: arXiv
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Bibliographic Details
Main Authors: Ardenghi, A., Bierwagen, O., Falkenstein, A., Hoffmann, G., Lähnemann, J., Martin, M., Mazzolini, P.
Format: Preprint
Published: 2022
Subjects:
Materials Science
Applied Physics
Online Access:
Acceder al recurso
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