Citazione Stile APA (7a Edizione)

Tsunasaki, M., Ono, T., & Uemoto, M. (2022). Theoretical investigation of vacancy related defects at 4H-SiC(000$\bar{1}$)/SiO$_2$ interface after wet oxidation.

Citazione stile Chigago Style (17a edizione)

Tsunasaki, Mukai, Tomoya Ono, e Mitsuharu Uemoto. Theoretical Investigation of Vacancy Related Defects at 4H-SiC(000$\bar{1}$)/SiO$_2$ Interface After Wet Oxidation. 2022.

Citatione MLA (9a ed.)

Tsunasaki, Mukai, et al. Theoretical Investigation of Vacancy Related Defects at 4H-SiC(000$\bar{1}$)/SiO$_2$ Interface After Wet Oxidation. 2022.