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Theoretical investigation of vacancy related defects at 4H-SiC(000$\bar{1}$)/SiO$_2$ interface after wet oxidation

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Bibliographic Details
Main Authors:	Tsunasaki, Mukai, Ono, Tomoya, Uemoto, Mitsuharu
Format:	Preprint
Published:	2022
Subjects:	Materials Science
Online Access:	Acceder al recurso
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