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Main Authors: Hershkovitz, Asaf, Hemaprabha, Elangovan, Khorshid, Doaa, Ma, Liyang, Liu, Shi, Cohen, Shai, Ivry, Yachin
Format: Preprint
Published: 2022
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Online Access:https://arxiv.org/abs/2202.13442
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author Hershkovitz, Asaf
Hemaprabha, Elangovan
Khorshid, Doaa
Ma, Liyang
Liu, Shi
Cohen, Shai
Ivry, Yachin
author_facet Hershkovitz, Asaf
Hemaprabha, Elangovan
Khorshid, Doaa
Ma, Liyang
Liu, Shi
Cohen, Shai
Ivry, Yachin
contents Ferroelectric domains are mesoscale structures that mediate between synchronized atomic-scale ion displacements and switchable macroscopic polarization. Here, we evaluated the randomness of the domain distribution at the onset of ferroelectricity. First-principle calculations combined with atomic-scale imaging demonstrate that oxygen vacancies that serve as pinning sites for the ferroic domain walls remain immobile above the Curie temperature. Thus, upon cooling to a ferroelectric state, these oxygen vacancies dictate reproducible domain-wall patterning. Domain-scale imaging with variable-temperature piezoresponse force microscopy confirmed the memory effect, questioning the spontaneity of domain distribution under thermotropic transitions.
format Preprint
id arxiv_https___arxiv_org_abs_2202_13442
institution arXiv
publishDate 2022
record_format arxiv
spellingShingle Oxygen-vacancy Mediated Deterministic Domain Distribution at the Onset of Ferroelectricity
Hershkovitz, Asaf
Hemaprabha, Elangovan
Khorshid, Doaa
Ma, Liyang
Liu, Shi
Cohen, Shai
Ivry, Yachin
Materials Science
Ferroelectric domains are mesoscale structures that mediate between synchronized atomic-scale ion displacements and switchable macroscopic polarization. Here, we evaluated the randomness of the domain distribution at the onset of ferroelectricity. First-principle calculations combined with atomic-scale imaging demonstrate that oxygen vacancies that serve as pinning sites for the ferroic domain walls remain immobile above the Curie temperature. Thus, upon cooling to a ferroelectric state, these oxygen vacancies dictate reproducible domain-wall patterning. Domain-scale imaging with variable-temperature piezoresponse force microscopy confirmed the memory effect, questioning the spontaneity of domain distribution under thermotropic transitions.
title Oxygen-vacancy Mediated Deterministic Domain Distribution at the Onset of Ferroelectricity
topic Materials Science
url https://arxiv.org/abs/2202.13442