Oxygen-vacancy Mediated Deterministic Domain Distribution at the Onset of Ferroelectricity
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arXiv
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| Autores principales: | , , , , , , |
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| Formato: | Preprint |
| Publicado: |
2022
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| Materias: | |
| Acceso en línea: | |
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| _version_ | 1866910317093584896 |
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| author | Hershkovitz, Asaf Hemaprabha, Elangovan Khorshid, Doaa Ma, Liyang Liu, Shi Cohen, Shai Ivry, Yachin |
| author_facet | Hershkovitz, Asaf Hemaprabha, Elangovan Khorshid, Doaa Ma, Liyang Liu, Shi Cohen, Shai Ivry, Yachin |
| contents | Ferroelectric domains are mesoscale structures that mediate between synchronized atomic-scale ion displacements and switchable macroscopic polarization. Here, we evaluated the randomness of the domain distribution at the onset of ferroelectricity. First-principle calculations combined with atomic-scale imaging demonstrate that oxygen vacancies that serve as pinning sites for the ferroic domain walls remain immobile above the Curie temperature. Thus, upon cooling to a ferroelectric state, these oxygen vacancies dictate reproducible domain-wall patterning. Domain-scale imaging with variable-temperature piezoresponse force microscopy confirmed the memory effect, questioning the spontaneity of domain distribution under thermotropic transitions. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2202_13442 |
| institution | arXiv |
| publishDate | 2022 |
| record_format | arxiv |
| spellingShingle | Oxygen-vacancy Mediated Deterministic Domain Distribution at the Onset of Ferroelectricity Hershkovitz, Asaf Hemaprabha, Elangovan Khorshid, Doaa Ma, Liyang Liu, Shi Cohen, Shai Ivry, Yachin Materials Science Ferroelectric domains are mesoscale structures that mediate between synchronized atomic-scale ion displacements and switchable macroscopic polarization. Here, we evaluated the randomness of the domain distribution at the onset of ferroelectricity. First-principle calculations combined with atomic-scale imaging demonstrate that oxygen vacancies that serve as pinning sites for the ferroic domain walls remain immobile above the Curie temperature. Thus, upon cooling to a ferroelectric state, these oxygen vacancies dictate reproducible domain-wall patterning. Domain-scale imaging with variable-temperature piezoresponse force microscopy confirmed the memory effect, questioning the spontaneity of domain distribution under thermotropic transitions. |
| title | Oxygen-vacancy Mediated Deterministic Domain Distribution at the Onset of Ferroelectricity |
| topic | Materials Science |
| url | https://arxiv.org/abs/2202.13442 |