Influence of the Pd-Si ratio on the valence transition in EuPd$_2$Si$_2$ single crystals

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Hauptverfasser: Kliemt, Kristin, Peters, Marius, Reiser, Isabel, Ocker, Michelle, Walther, Franziska, Tran, Doan-My, Cho, Eunhyung, Merz, Michael, Haghighirad, Amir A., Hezel, Dominik C., Ritter, Franz, Krellner, Cornelius
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Veröffentlicht: 2022
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author Kliemt, Kristin
Peters, Marius
Reiser, Isabel
Ocker, Michelle
Walther, Franziska
Tran, Doan-My
Cho, Eunhyung
Merz, Michael
Haghighirad, Amir A.
Hezel, Dominik C.
Ritter, Franz
Krellner, Cornelius
author_facet Kliemt, Kristin
Peters, Marius
Reiser, Isabel
Ocker, Michelle
Walther, Franziska
Tran, Doan-My
Cho, Eunhyung
Merz, Michael
Haghighirad, Amir A.
Hezel, Dominik C.
Ritter, Franz
Krellner, Cornelius
contents Single crystals of intermediate valent EuPd$_2$Si$_2$ were grown from an Eu-rich melt by the Bridgman as well as the Czochralski technique. The chemical and structural characterization of an extracted single crystalline Czochralski-grown specimen yielded a slight variation of the Si-Pd ratio along the growth direction and confirms the existence of a finite Eu(Pd$_{1-m}$Si$_m$)$_2$Si$_2$ homogeneity range. The thorough physical characterization carried out on the same crystal showed that this tiny variation in the composition affects the temperature $T_v$ at which the valence transition occurs. These experiments demonstrate a strong coupling between structural and physical properties in the prototypical valence-fluctuating system EuPd$_2$Si$_2$ and explain the different reported values of $T_v$.
format Preprint
id arxiv_https___arxiv_org_abs_2203_05136
institution arXiv
publishDate 2022
record_format arxiv
spellingShingle Influence of the Pd-Si ratio on the valence transition in EuPd$_2$Si$_2$ single crystals
Kliemt, Kristin
Peters, Marius
Reiser, Isabel
Ocker, Michelle
Walther, Franziska
Tran, Doan-My
Cho, Eunhyung
Merz, Michael
Haghighirad, Amir A.
Hezel, Dominik C.
Ritter, Franz
Krellner, Cornelius
Strongly Correlated Electrons
Single crystals of intermediate valent EuPd$_2$Si$_2$ were grown from an Eu-rich melt by the Bridgman as well as the Czochralski technique. The chemical and structural characterization of an extracted single crystalline Czochralski-grown specimen yielded a slight variation of the Si-Pd ratio along the growth direction and confirms the existence of a finite Eu(Pd$_{1-m}$Si$_m$)$_2$Si$_2$ homogeneity range. The thorough physical characterization carried out on the same crystal showed that this tiny variation in the composition affects the temperature $T_v$ at which the valence transition occurs. These experiments demonstrate a strong coupling between structural and physical properties in the prototypical valence-fluctuating system EuPd$_2$Si$_2$ and explain the different reported values of $T_v$.
title Influence of the Pd-Si ratio on the valence transition in EuPd$_2$Si$_2$ single crystals
topic Strongly Correlated Electrons
url https://arxiv.org/abs/2203.05136