Silicon carbide for integrated photonics
Fuente:
arXiv
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| Auteurs principaux: | , , , , , , , |
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| Format: | Preprint |
| Publié: |
2022
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| _version_ | 1866929381311512576 |
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| author | Yi, Ailun Wang, Chengli Zhou, Liping Zhou, Min Zhang, Shibin You, Tiangui Zhang, Jiaxiang Ou, Xin |
| author_facet | Yi, Ailun Wang, Chengli Zhou, Liping Zhou, Min Zhang, Shibin You, Tiangui Zhang, Jiaxiang Ou, Xin |
| contents | The recent progress in chip-scale integrated photonics has stimulated the rapid development of material platforms with desired optical properties. Among the different material platforms that are currently investigated, the third-generation semiconductor, silicon carbide (SiC), offers the broadest range of functionalities, including wide bandgap, high optical nonlinearities, high refractive index, and CMOS-compatible device fabrication process. Here, we provide an overview of SiC-based integrated photonics, presenting the latest progress on investigating its basic optical and optoelectronic properties, as well as the recent developments in the fabrication of several typical approaches for light confinement structures that form the basic building blocks for low-loss, high functional and industry-compatible integrated photonic platform. Moreover, recent works employing SiC as optically-readable spin hosts for quantum information applications are also summarized and discussed. As a still-developing integrated photonic platform, the prospects and challenges of SiC material platform in the field of integrated photonics are also discussed, followed by potential solutions. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2203_11646 |
| institution | arXiv |
| publishDate | 2022 |
| record_format | arxiv |
| spellingShingle | Silicon carbide for integrated photonics Yi, Ailun Wang, Chengli Zhou, Liping Zhou, Min Zhang, Shibin You, Tiangui Zhang, Jiaxiang Ou, Xin Optics Applied Physics The recent progress in chip-scale integrated photonics has stimulated the rapid development of material platforms with desired optical properties. Among the different material platforms that are currently investigated, the third-generation semiconductor, silicon carbide (SiC), offers the broadest range of functionalities, including wide bandgap, high optical nonlinearities, high refractive index, and CMOS-compatible device fabrication process. Here, we provide an overview of SiC-based integrated photonics, presenting the latest progress on investigating its basic optical and optoelectronic properties, as well as the recent developments in the fabrication of several typical approaches for light confinement structures that form the basic building blocks for low-loss, high functional and industry-compatible integrated photonic platform. Moreover, recent works employing SiC as optically-readable spin hosts for quantum information applications are also summarized and discussed. As a still-developing integrated photonic platform, the prospects and challenges of SiC material platform in the field of integrated photonics are also discussed, followed by potential solutions. |
| title | Silicon carbide for integrated photonics |
| topic | Optics Applied Physics |
| url | https://arxiv.org/abs/2203.11646 |