Improved Gradual Resistive Switching Range and 1000x On/Off Ratio in HfOx RRAM Achieved with a $Ge_2Sb_2Te_5$ Thermal Barrier

Fuente: arXiv

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Bibliographic Details
Main Authors:	Islam, Raisul, Qin, Shengjun, Deshmukh, Sanchit, Yu, Zhouchangwan, Koroglu, Cagil, Khan, Asir Intisar, Schauble, Kirstin, Saraswat, Krishna C., Pop, Eric, Wong, H. -S. Philip
Format:	Preprint
Published:	2022
Subjects:	Applied Physics Materials Science
Online Access:	Acceder al recurso
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Internet

https://arxiv.org/abs/2203.12190