Improved Gradual Resistive Switching Range and 1000x On/Off Ratio in HfOx RRAM Achieved with a $Ge_2Sb_2Te_5$ Thermal Barrier
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arXiv
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| Autori principali: | , , , , , , , , , |
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| Natura: | Preprint |
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2022
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| _version_ | 1866911258591100928 |
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| author | Islam, Raisul Qin, Shengjun Deshmukh, Sanchit Yu, Zhouchangwan Koroglu, Cagil Khan, Asir Intisar Schauble, Kirstin Saraswat, Krishna C. Pop, Eric Wong, H. -S. Philip |
| author_facet | Islam, Raisul Qin, Shengjun Deshmukh, Sanchit Yu, Zhouchangwan Koroglu, Cagil Khan, Asir Intisar Schauble, Kirstin Saraswat, Krishna C. Pop, Eric Wong, H. -S. Philip |
| contents | Gradual switching between multiple resistance levels is desirable for analog in-memory computing using resistive random-access memory (RRAM). However, the filamentary switching of $HfO_x$-based conventional RRAM often yields only two stable memory states instead of gradual switching between multiple resistance states. Here, we demonstrate that a thermal barrier of $Ge_2Sb_2Te_5$ (GST) between $HfO_x$ and the bottom electrode (TiN) enables wider and weaker filaments, by promoting heat spreading laterally inside the $HfO_x$. Scanning thermal microscopy suggests that $HfO_x+GST$ devices have a wider heating region than control devices with only $HfO_x$, indicating the formation of a wider filament. Such wider filaments can have multiple stable conduction paths, resulting in a memory device with more gradual and linear switching. The thermally-enhanced $HfO_x+GST$ devices also have higher on/off ratio ($>10^3$) than control devices ($<10^2$), and a median set voltage lower by approximately 1 V (~35%), with a corresponding reduction of the switching power. Our $HfO_x+GST$ RRAM shows 2x gradual switching range using fast (~ns) identical pulse trains with amplitude less than 2 V. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2203_12190 |
| institution | arXiv |
| publishDate | 2022 |
| record_format | arxiv |
| spellingShingle | Improved Gradual Resistive Switching Range and 1000x On/Off Ratio in HfOx RRAM Achieved with a $Ge_2Sb_2Te_5$ Thermal Barrier Islam, Raisul Qin, Shengjun Deshmukh, Sanchit Yu, Zhouchangwan Koroglu, Cagil Khan, Asir Intisar Schauble, Kirstin Saraswat, Krishna C. Pop, Eric Wong, H. -S. Philip Applied Physics Materials Science Gradual switching between multiple resistance levels is desirable for analog in-memory computing using resistive random-access memory (RRAM). However, the filamentary switching of $HfO_x$-based conventional RRAM often yields only two stable memory states instead of gradual switching between multiple resistance states. Here, we demonstrate that a thermal barrier of $Ge_2Sb_2Te_5$ (GST) between $HfO_x$ and the bottom electrode (TiN) enables wider and weaker filaments, by promoting heat spreading laterally inside the $HfO_x$. Scanning thermal microscopy suggests that $HfO_x+GST$ devices have a wider heating region than control devices with only $HfO_x$, indicating the formation of a wider filament. Such wider filaments can have multiple stable conduction paths, resulting in a memory device with more gradual and linear switching. The thermally-enhanced $HfO_x+GST$ devices also have higher on/off ratio ($>10^3$) than control devices ($<10^2$), and a median set voltage lower by approximately 1 V (~35%), with a corresponding reduction of the switching power. Our $HfO_x+GST$ RRAM shows 2x gradual switching range using fast (~ns) identical pulse trains with amplitude less than 2 V. |
| title | Improved Gradual Resistive Switching Range and 1000x On/Off Ratio in HfOx RRAM Achieved with a $Ge_2Sb_2Te_5$ Thermal Barrier |
| topic | Applied Physics Materials Science |
| url | https://arxiv.org/abs/2203.12190 |