Hexagonal network of photocurrent enhancement in few-layer graphene/InGaN quantum dot junctions
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arXiv
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| Format: | Preprint |
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2022
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| _version_ | 1866913455449047040 |
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| author | Cheng, Guanghui Jin, Zijing Zhao, Chunyu Zhou, Chengjie Li, Baikui Wang, Jiannong |
| author_facet | Cheng, Guanghui Jin, Zijing Zhao, Chunyu Zhou, Chengjie Li, Baikui Wang, Jiannong |
| contents | Strain in two-dimensional (2D) materials has attracted particular attention owing to the remarkable modification of electronic and optical properties. However, emergent electromechanical phenomena and hidden mechanisms, such as strain-superlattice-induced topological states or flexoelectricity under strain gradient, remain under debate. Here, using scanning photocurrent microscopy, we observe significant photocurrent enhancement in hybrid vertical junction devices made of strained few-layer graphene and InGaN quantum dots. Optoelectronic response and photoluminescence measurements demonstrate a possible mechanism closely tied to the flexoelectric effect in few-layer graphene, where the strain can induce a lateral built-in electric field and assist the separation of electron-hole pairs. Photocurrent mapping reveals an unprecedentedly ordered hexagonal network, suggesting the potential to create a superlattice by strain engineering. Our work provides insights into optoelectronic phenomena in the presence of strain and paves the way for practical applications associated with strained 2D materials. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2203_12988 |
| institution | arXiv |
| publishDate | 2022 |
| record_format | arxiv |
| spellingShingle | Hexagonal network of photocurrent enhancement in few-layer graphene/InGaN quantum dot junctions Cheng, Guanghui Jin, Zijing Zhao, Chunyu Zhou, Chengjie Li, Baikui Wang, Jiannong Mesoscale and Nanoscale Physics Strain in two-dimensional (2D) materials has attracted particular attention owing to the remarkable modification of electronic and optical properties. However, emergent electromechanical phenomena and hidden mechanisms, such as strain-superlattice-induced topological states or flexoelectricity under strain gradient, remain under debate. Here, using scanning photocurrent microscopy, we observe significant photocurrent enhancement in hybrid vertical junction devices made of strained few-layer graphene and InGaN quantum dots. Optoelectronic response and photoluminescence measurements demonstrate a possible mechanism closely tied to the flexoelectric effect in few-layer graphene, where the strain can induce a lateral built-in electric field and assist the separation of electron-hole pairs. Photocurrent mapping reveals an unprecedentedly ordered hexagonal network, suggesting the potential to create a superlattice by strain engineering. Our work provides insights into optoelectronic phenomena in the presence of strain and paves the way for practical applications associated with strained 2D materials. |
| title | Hexagonal network of photocurrent enhancement in few-layer graphene/InGaN quantum dot junctions |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2203.12988 |