Saved in:
| Main Authors: | , , , , |
|---|---|
| Format: | Preprint |
| Published: |
2022
|
| Subjects: | |
| Online Access: | https://arxiv.org/abs/2203.14419 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1866918418125422592 |
|---|---|
| author | Attiaoui, Anis Fettu, Gabriel Mukherjee, Samik Bauer, Matthias Moutanabbir, Oussama |
| author_facet | Attiaoui, Anis Fettu, Gabriel Mukherjee, Samik Bauer, Matthias Moutanabbir, Oussama |
| contents | A theoretical framework incorporating atomic-level interfacial details is derived to include the electronic structure of buried interfaces and describe the behavior of charge carriers in heterostructures in the presence of finite interfacial broadening. Applying this model to ultrathin heteroepitaxial (SiGe)m/(Si)m superlattices predicts the existence of localized energy levels in the band structure induced by sub-nanometer broadening, which provides additional paths for hole-electron recombination. These predicted interfacial electronic transitions and the associated absorptive effects are confirmed experimentally at variable superlattice thickness and periodicity. By mapping the energy of the critical points, the optical transitions are identified between 2 and 2.5 eV thus extending the optical absorption to lower energies. This phenomenon enables a straightforward and non-destructive probe of the atomic-level broadening in heterostructures. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2203_14419 |
| institution | arXiv |
| publishDate | 2022 |
| record_format | arxiv |
| spellingShingle | Localized Energy States Induced by Atomic-Level Interfacial Broadening in Heterostructures Attiaoui, Anis Fettu, Gabriel Mukherjee, Samik Bauer, Matthias Moutanabbir, Oussama Materials Science Optics A theoretical framework incorporating atomic-level interfacial details is derived to include the electronic structure of buried interfaces and describe the behavior of charge carriers in heterostructures in the presence of finite interfacial broadening. Applying this model to ultrathin heteroepitaxial (SiGe)m/(Si)m superlattices predicts the existence of localized energy levels in the band structure induced by sub-nanometer broadening, which provides additional paths for hole-electron recombination. These predicted interfacial electronic transitions and the associated absorptive effects are confirmed experimentally at variable superlattice thickness and periodicity. By mapping the energy of the critical points, the optical transitions are identified between 2 and 2.5 eV thus extending the optical absorption to lower energies. This phenomenon enables a straightforward and non-destructive probe of the atomic-level broadening in heterostructures. |
| title | Localized Energy States Induced by Atomic-Level Interfacial Broadening in Heterostructures |
| topic | Materials Science Optics |
| url | https://arxiv.org/abs/2203.14419 |