Nanocryotron-driven Charge Configuration Memristor

Fuente: arXiv
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Hauptverfasser: Mraz, Anze, Kabanov, Viktor V., Venturini, Rok, Svetin, Damjan, Yursa, Viktoriia, Vaskivskyi, Igor, Brezec, Bor, Lotrič, Tevž, Merljak, Matic, Ravnik, Jan, Kazazis, Dimitris, Gerber, Simon, Ekinci, Yasin, Gabureac, Mihai, Mihailovic, Dragan
Format: Preprint
Veröffentlicht: 2022
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author Mraz, Anze
Kabanov, Viktor V.
Venturini, Rok
Svetin, Damjan
Yursa, Viktoriia
Vaskivskyi, Igor
Brezec, Bor
Lotrič, Tevž
Merljak, Matic
Ravnik, Jan
Kazazis, Dimitris
Gerber, Simon
Ekinci, Yasin
Gabureac, Mihai
Mihailovic, Dragan
author_facet Mraz, Anze
Kabanov, Viktor V.
Venturini, Rok
Svetin, Damjan
Yursa, Viktoriia
Vaskivskyi, Igor
Brezec, Bor
Lotrič, Tevž
Merljak, Matic
Ravnik, Jan
Kazazis, Dimitris
Gerber, Simon
Ekinci, Yasin
Gabureac, Mihai
Mihailovic, Dragan
contents Cryo-computing - both classical and quantum, is severely limited by the absence of a suitable cryo-memory. The challenge both in terms of energy efficiency and speed have been known for decades, but so far conventional technologies have not been able to deliver adequate performance. Here we present a novel non-volatile memory device which incorporates a superconducting nanowire and an all-electronic charge configuration memristor (CCM) based on switching between charge-ordered states in a layered dichalcogenide material. We investigate the time-dynamics and current-voltage characteristics of such a device fabricated using a NbTiN nanowire and a 1T-TaS2 CCM. The observed dynamical response of the device is faithfully reproduced by modelling of the superconducting order parameter showing versatility of application. The inherent ultrahigh energy efficiency and speed of the device, which is compatible with single flux quantum logic, leads to a promising new memory concept for use in cryo-computing and quantum computing peripheral devices.
format Preprint
id arxiv_https___arxiv_org_abs_2203_14586
institution arXiv
publishDate 2022
record_format arxiv
spellingShingle Nanocryotron-driven Charge Configuration Memristor
Mraz, Anze
Kabanov, Viktor V.
Venturini, Rok
Svetin, Damjan
Yursa, Viktoriia
Vaskivskyi, Igor
Brezec, Bor
Lotrič, Tevž
Merljak, Matic
Ravnik, Jan
Kazazis, Dimitris
Gerber, Simon
Ekinci, Yasin
Gabureac, Mihai
Mihailovic, Dragan
Computational Physics
Mesoscale and Nanoscale Physics
Superconductivity
Applied Physics
Cryo-computing - both classical and quantum, is severely limited by the absence of a suitable cryo-memory. The challenge both in terms of energy efficiency and speed have been known for decades, but so far conventional technologies have not been able to deliver adequate performance. Here we present a novel non-volatile memory device which incorporates a superconducting nanowire and an all-electronic charge configuration memristor (CCM) based on switching between charge-ordered states in a layered dichalcogenide material. We investigate the time-dynamics and current-voltage characteristics of such a device fabricated using a NbTiN nanowire and a 1T-TaS2 CCM. The observed dynamical response of the device is faithfully reproduced by modelling of the superconducting order parameter showing versatility of application. The inherent ultrahigh energy efficiency and speed of the device, which is compatible with single flux quantum logic, leads to a promising new memory concept for use in cryo-computing and quantum computing peripheral devices.
title Nanocryotron-driven Charge Configuration Memristor
topic Computational Physics
Mesoscale and Nanoscale Physics
Superconductivity
Applied Physics
url https://arxiv.org/abs/2203.14586