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| Autores principales: | , , , , , , , |
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| Formato: | Preprint |
| Publicado: |
2022
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| Materias: | |
| Acceso en línea: | https://arxiv.org/abs/2203.15904 |
| Etiquetas: |
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- By studying charge trapping in germanium (Ge) detectors operating at temperatures below 10 K, we demonstrate for the first time that the formation of cluster dipole states from residual impurities is responsible for charge trapping. Two planar detectors with different impurity levels and types are used in this study. When drifting the localized charge carriers created by $α$ particles from the top surface across a detector under a lower bias voltage, significant charge trapping is observed when compared to operating at a higher bias voltage. The amount of charge trapping shows a strong dependence on the type of charge carriers. Electrons are trapped more than holes in a p-type detector while holes are trapped more than electrons in a n-type detector. When both electrons and holes are drifted simultaneously using the widespread charge carriers created by $γ$ rays inside the detector, the amount of charge trapping shows no dependence on the polarity of bias voltage.