Maximizing intrinsic anomalous Hall effect by controlling the Fermi level in simple Weyl semimetal films

Fuente: arXiv
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Autores principales: Ohno, Mizuki, Minami, Susumu, Nakazawa, Yusuke, Sato, Shin, Kriener, Markus, Arita, Ryotaro, Kawasaki, Masashi, Uchida, Masaki
Formato: Preprint
Publicado: 2022
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author Ohno, Mizuki
Minami, Susumu
Nakazawa, Yusuke
Sato, Shin
Kriener, Markus
Arita, Ryotaro
Kawasaki, Masashi
Uchida, Masaki
author_facet Ohno, Mizuki
Minami, Susumu
Nakazawa, Yusuke
Sato, Shin
Kriener, Markus
Arita, Ryotaro
Kawasaki, Masashi
Uchida, Masaki
contents Large intrinsic anomalous Hall effect (AHE) originating in the Berry curvature has attracted growing attention for potential applications. Recently proposed magnetic Weyl semimetal EuCd$_2$Sb$_{\mathrm{2}}$ provides an excellent platform for controlling the intrinsic AHE because it only hosts a Weyl-points related band structure near the Fermi energy. Here we report the fabrication of EuCd$_2$Sb$_{\mathrm{2}}$ single-crystalline films and control of their anomalous Hall effect by film technique. As also analyzed by first-principles calculations of energy-dependent intrinsic anomalous Hall conductivity, the obtained anomalous Hall effect shows a sharp peak as a function of carrier density, demonstrating clear energy dependence of the intrinsic AHE.
format Preprint
id arxiv_https___arxiv_org_abs_2204_06880
institution arXiv
publishDate 2022
record_format arxiv
spellingShingle Maximizing intrinsic anomalous Hall effect by controlling the Fermi level in simple Weyl semimetal films
Ohno, Mizuki
Minami, Susumu
Nakazawa, Yusuke
Sato, Shin
Kriener, Markus
Arita, Ryotaro
Kawasaki, Masashi
Uchida, Masaki
Strongly Correlated Electrons
Materials Science
Large intrinsic anomalous Hall effect (AHE) originating in the Berry curvature has attracted growing attention for potential applications. Recently proposed magnetic Weyl semimetal EuCd$_2$Sb$_{\mathrm{2}}$ provides an excellent platform for controlling the intrinsic AHE because it only hosts a Weyl-points related band structure near the Fermi energy. Here we report the fabrication of EuCd$_2$Sb$_{\mathrm{2}}$ single-crystalline films and control of their anomalous Hall effect by film technique. As also analyzed by first-principles calculations of energy-dependent intrinsic anomalous Hall conductivity, the obtained anomalous Hall effect shows a sharp peak as a function of carrier density, demonstrating clear energy dependence of the intrinsic AHE.
title Maximizing intrinsic anomalous Hall effect by controlling the Fermi level in simple Weyl semimetal films
topic Strongly Correlated Electrons
Materials Science
url https://arxiv.org/abs/2204.06880