Saved in:
| Main Authors: | , , , , , , , , , , , |
|---|---|
| Format: | Preprint |
| Published: |
2022
|
| Subjects: | |
| Online Access: | https://arxiv.org/abs/2204.07656 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1866917697663533056 |
|---|---|
| author | de Araujo, C. A. Paz Celinska, Jolanta McWilliams, Chris R. Shifren, Lucian Yeric, Greg Huang, X. M. Henry Suryavanshi, Saurabh Vinayak Rosendale, Glen Afanas'ev, Valeri Marino, Eduardo C. Narayan, Dushyant Madhav Dessau, Daniel S |
| author_facet | de Araujo, C. A. Paz Celinska, Jolanta McWilliams, Chris R. Shifren, Lucian Yeric, Greg Huang, X. M. Henry Suryavanshi, Saurabh Vinayak Rosendale, Glen Afanas'ev, Valeri Marino, Eduardo C. Narayan, Dushyant Madhav Dessau, Daniel S |
| contents | Transition metal oxides (TMOs) and post-TMOs (PTMOs), when doped with Carbon, show non-volatile current-voltage (I-V) characteristics, which are both universal and repeatable. We have shown spectroscopic evidence of the introduction of carbon-based impurity states inside the existing larger bandgap effectively creating a smaller bandgap which we suggest could enable Mott-like correlation effect. Our findings indicate new insights for yet to be understood unipolar and nonpolar resistive switching in the TMOs and PTMOs. We have shown that device switching is not thermal-energy dependent and have developed an electronic-dominated switching model that allows for the extreme temperature operation (from 1.5 K to 423 K) and state retention up to 673 K for a 1-hour bake. Importantly, we have optimized the technology in an industrial process and demonstrated integrated 1-transistor/1-resistor (1T1R) arrays up to 1 kbit with 47 nm devices on 300 mm wafers for advanced node CMOS-compatible correlated electron RAM (CeRAM). These devices are shown to operate with 2 ns write pulses and retain the memory states up to 200 C for 24 hours. The collection of attributes shown, including scalability to state-of-the-art dimensions, non-volatile operation to extreme low and high temperatures, fast write, and reduced stochasticity as compared to filamentary memories such as ReRAMs show the potential for a highly capable two-terminal back-end-of-line non-volatile memory. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2204_07656 |
| institution | arXiv |
| publishDate | 2022 |
| record_format | arxiv |
| spellingShingle | Universal Non-Polar Switching in Carbon-doped Transition Metal Oxides (TMOs) and Post TMOs de Araujo, C. A. Paz Celinska, Jolanta McWilliams, Chris R. Shifren, Lucian Yeric, Greg Huang, X. M. Henry Suryavanshi, Saurabh Vinayak Rosendale, Glen Afanas'ev, Valeri Marino, Eduardo C. Narayan, Dushyant Madhav Dessau, Daniel S Mesoscale and Nanoscale Physics Materials Science Strongly Correlated Electrons Transition metal oxides (TMOs) and post-TMOs (PTMOs), when doped with Carbon, show non-volatile current-voltage (I-V) characteristics, which are both universal and repeatable. We have shown spectroscopic evidence of the introduction of carbon-based impurity states inside the existing larger bandgap effectively creating a smaller bandgap which we suggest could enable Mott-like correlation effect. Our findings indicate new insights for yet to be understood unipolar and nonpolar resistive switching in the TMOs and PTMOs. We have shown that device switching is not thermal-energy dependent and have developed an electronic-dominated switching model that allows for the extreme temperature operation (from 1.5 K to 423 K) and state retention up to 673 K for a 1-hour bake. Importantly, we have optimized the technology in an industrial process and demonstrated integrated 1-transistor/1-resistor (1T1R) arrays up to 1 kbit with 47 nm devices on 300 mm wafers for advanced node CMOS-compatible correlated electron RAM (CeRAM). These devices are shown to operate with 2 ns write pulses and retain the memory states up to 200 C for 24 hours. The collection of attributes shown, including scalability to state-of-the-art dimensions, non-volatile operation to extreme low and high temperatures, fast write, and reduced stochasticity as compared to filamentary memories such as ReRAMs show the potential for a highly capable two-terminal back-end-of-line non-volatile memory. |
| title | Universal Non-Polar Switching in Carbon-doped Transition Metal Oxides (TMOs) and Post TMOs |
| topic | Mesoscale and Nanoscale Physics Materials Science Strongly Correlated Electrons |
| url | https://arxiv.org/abs/2204.07656 |