How much gallium do we need for a p-type Cu(In,Ga)Se2?
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arXiv
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| Main Authors: | , , , , , , |
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| Format: | Preprint |
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2022
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| _version_ | 1866911290469908480 |
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| author | Ramírez, Omar Lanzoni, Evandro Martin Poeira, Ricardo G. Weiss, Thomas P. Leturcq, Renaud Redinger, Alex Siebentritt, Susanne |
| author_facet | Ramírez, Omar Lanzoni, Evandro Martin Poeira, Ricardo G. Weiss, Thomas P. Leturcq, Renaud Redinger, Alex Siebentritt, Susanne |
| contents | Doping in the chalcopyrite Cu(In,Ga)Se2 is determined by intrinsic point defects. In the ternary CuInSe2, both N-type and P-type conductivity can be obtained depending on the growth conditions and stoichiometry: N-type is obtained when grown Cu-poor, Se-poor and alkali-free. CuGaSe2, on the other hand, is found to be always a P-type semiconductor that seems to resist all kinds of N-type doping no matter whether it comes from native defects or extrinsic impurities. In this contribution, we study the N-to-P transition in Cu-poor Cu(In,Ga)Se2 single crystals in dependence of the gallium content. Our results show that Cu(In,Ga)Se2 can still be grown as an N-type semiconductor until the gallium content reaches the critical concentration of 15-19%, where the N-to-P transition occurs. Furthermore, trends in the Seebeck coefficient and activation energies extracted from temperature-dependent conductivity measurements, demonstrate that the carrier concentration drops by around two orders of magnitude near the transition concentration. Our proposed model explains the N-to-P transition based on the differences in formation energies of donor and acceptor defects caused by the addition of gallium. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2204_12973 |
| institution | arXiv |
| publishDate | 2022 |
| record_format | arxiv |
| spellingShingle | How much gallium do we need for a p-type Cu(In,Ga)Se2? Ramírez, Omar Lanzoni, Evandro Martin Poeira, Ricardo G. Weiss, Thomas P. Leturcq, Renaud Redinger, Alex Siebentritt, Susanne Materials Science Applied Physics Doping in the chalcopyrite Cu(In,Ga)Se2 is determined by intrinsic point defects. In the ternary CuInSe2, both N-type and P-type conductivity can be obtained depending on the growth conditions and stoichiometry: N-type is obtained when grown Cu-poor, Se-poor and alkali-free. CuGaSe2, on the other hand, is found to be always a P-type semiconductor that seems to resist all kinds of N-type doping no matter whether it comes from native defects or extrinsic impurities. In this contribution, we study the N-to-P transition in Cu-poor Cu(In,Ga)Se2 single crystals in dependence of the gallium content. Our results show that Cu(In,Ga)Se2 can still be grown as an N-type semiconductor until the gallium content reaches the critical concentration of 15-19%, where the N-to-P transition occurs. Furthermore, trends in the Seebeck coefficient and activation energies extracted from temperature-dependent conductivity measurements, demonstrate that the carrier concentration drops by around two orders of magnitude near the transition concentration. Our proposed model explains the N-to-P transition based on the differences in formation energies of donor and acceptor defects caused by the addition of gallium. |
| title | How much gallium do we need for a p-type Cu(In,Ga)Se2? |
| topic | Materials Science Applied Physics |
| url | https://arxiv.org/abs/2204.12973 |