Hot phonon effects and suppressed Auger recombination on 3 $μ$m room temperature lasing in HgTe-based multiple quantum well diodes
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arXiv
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| Auteurs principaux: | , , , , , |
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| Format: | Preprint |
| Publié: |
2022
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| _version_ | 1866916292130242560 |
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| author | Afonenko, Alexander Ushakov, Dmitrii Dubinov, Aleksandr Aleshkin, Vladimir Morozov, Sergey Gavrilenko, Vladimir |
| author_facet | Afonenko, Alexander Ushakov, Dmitrii Dubinov, Aleksandr Aleshkin, Vladimir Morozov, Sergey Gavrilenko, Vladimir |
| contents | We propose an electrically pumped laser diode based on multiple HgTe quantum wells with band structure engineered for Auger recombination suppression. A model for accounting for hot phonons is developed for calculating the nonequilibrium temperature of electrons and holes. Using a comprehensive model accounting for carrier drift and diffusion, Auger recombination and hotphonon effects, we predict of lasing at $λ\sim 3 $ $μ$m at room temperature in 2.2 nm HgTe/Cd$_{0.85}$Hg$_{0.15}$Te quantum well heterostructure. The output power in the pulse can reach up to 600 mW for 100 nanosecond-duration pulses. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2204_13110 |
| institution | arXiv |
| publishDate | 2022 |
| record_format | arxiv |
| spellingShingle | Hot phonon effects and suppressed Auger recombination on 3 $μ$m room temperature lasing in HgTe-based multiple quantum well diodes Afonenko, Alexander Ushakov, Dmitrii Dubinov, Aleksandr Aleshkin, Vladimir Morozov, Sergey Gavrilenko, Vladimir Optics We propose an electrically pumped laser diode based on multiple HgTe quantum wells with band structure engineered for Auger recombination suppression. A model for accounting for hot phonons is developed for calculating the nonequilibrium temperature of electrons and holes. Using a comprehensive model accounting for carrier drift and diffusion, Auger recombination and hotphonon effects, we predict of lasing at $λ\sim 3 $ $μ$m at room temperature in 2.2 nm HgTe/Cd$_{0.85}$Hg$_{0.15}$Te quantum well heterostructure. The output power in the pulse can reach up to 600 mW for 100 nanosecond-duration pulses. |
| title | Hot phonon effects and suppressed Auger recombination on 3 $μ$m room temperature lasing in HgTe-based multiple quantum well diodes |
| topic | Optics |
| url | https://arxiv.org/abs/2204.13110 |