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| Main Authors: | , , , , , |
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| Format: | Preprint |
| Published: |
2022
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2204.13110 |
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Table of Contents:
- We propose an electrically pumped laser diode based on multiple HgTe quantum wells with band structure engineered for Auger recombination suppression. A model for accounting for hot phonons is developed for calculating the nonequilibrium temperature of electrons and holes. Using a comprehensive model accounting for carrier drift and diffusion, Auger recombination and hotphonon effects, we predict of lasing at $λ\sim 3 $ $μ$m at room temperature in 2.2 nm HgTe/Cd$_{0.85}$Hg$_{0.15}$Te quantum well heterostructure. The output power in the pulse can reach up to 600 mW for 100 nanosecond-duration pulses.