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| Main Authors: | , , , , , , , , , , |
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| Format: | Preprint |
| Published: |
2022
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2204.13138 |
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| _version_ | 1866908677844238336 |
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| author | Weiss, Thomas Paul Minguez-Bacho, Ignacio Zuccalà, Elena Melchiorre, Michele Valle, Nathalie Adib, Brahime El Yokosawa, Tadahiro Spiecker, Erdmann Bachmann, Julien Dale, Phillip J. Siebentritt, Susanne |
| author_facet | Weiss, Thomas Paul Minguez-Bacho, Ignacio Zuccalà, Elena Melchiorre, Michele Valle, Nathalie Adib, Brahime El Yokosawa, Tadahiro Spiecker, Erdmann Bachmann, Julien Dale, Phillip J. Siebentritt, Susanne |
| contents | Currently, Sb$_2$Se$_3$ thin films receive considerable research interest as a solar cell absorber material. When completed into a device stack, the major bottleneck for further device improvement is the open circuit voltage, which is the focus of the work presented here. Polycrystalline thin film Sb$_2$Se$_3$ absorbers and solar cells are prepared in substrate configuration and the dominant recombination path is studied using photoluminescence spectroscopy and temperature dependent current-voltage characteristics. It is found that a post-deposition annealing after the CdS buffer layer deposition can effectively remove interface recombination since the activation energy of the dominant recombination path becomes equal to the bandgap of the Sb$_2$Se$_3$ absorber. The increased activation energy is accompanied by an increased photoluminescence yield, i.e. reduced non-radiative recombination. Finished Sb$_2$Se$_3$ solar cell devices reach open circuit voltages as high as 485 mV. Contrarily, the short-circuit current density of these devices is limiting the efficiency after the post-deposition annealing. It is shown that atomic layer deposited intermediate buffer layers such as TiO$_2$ or Sb$_2$Se$_3$ can pave the way for overcoming this limitation. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2204_13138 |
| institution | arXiv |
| publishDate | 2022 |
| record_format | arxiv |
| spellingShingle | Post-deposition annealing and interfacial ALD buffer layers of Sb$_2$Se$_3$/CdS stacks for reduced interface recombination and increased open-circuit voltages Weiss, Thomas Paul Minguez-Bacho, Ignacio Zuccalà, Elena Melchiorre, Michele Valle, Nathalie Adib, Brahime El Yokosawa, Tadahiro Spiecker, Erdmann Bachmann, Julien Dale, Phillip J. Siebentritt, Susanne Materials Science Currently, Sb$_2$Se$_3$ thin films receive considerable research interest as a solar cell absorber material. When completed into a device stack, the major bottleneck for further device improvement is the open circuit voltage, which is the focus of the work presented here. Polycrystalline thin film Sb$_2$Se$_3$ absorbers and solar cells are prepared in substrate configuration and the dominant recombination path is studied using photoluminescence spectroscopy and temperature dependent current-voltage characteristics. It is found that a post-deposition annealing after the CdS buffer layer deposition can effectively remove interface recombination since the activation energy of the dominant recombination path becomes equal to the bandgap of the Sb$_2$Se$_3$ absorber. The increased activation energy is accompanied by an increased photoluminescence yield, i.e. reduced non-radiative recombination. Finished Sb$_2$Se$_3$ solar cell devices reach open circuit voltages as high as 485 mV. Contrarily, the short-circuit current density of these devices is limiting the efficiency after the post-deposition annealing. It is shown that atomic layer deposited intermediate buffer layers such as TiO$_2$ or Sb$_2$Se$_3$ can pave the way for overcoming this limitation. |
| title | Post-deposition annealing and interfacial ALD buffer layers of Sb$_2$Se$_3$/CdS stacks for reduced interface recombination and increased open-circuit voltages |
| topic | Materials Science |
| url | https://arxiv.org/abs/2204.13138 |