Density functional theory calculations for investigation of atomic structures of 4H-SiC/SiO$_2$ interface after NO annealing

Documenti analoghi

• Density functional theory study of effect of NO annealing on electronic structure and carrier-scattering property of 4H-SiC(0001)/SiO$_2$ interface
  di: Funaki, Nahoto, et al.
  Pubblicazione: (2025)
• Theoretical investigation of vacancy related defects at 4H-SiC(000$\bar{1}$)/SiO$_2$ interface after wet oxidation
  di: Tsunasaki, Mukai, et al.
  Pubblicazione: (2022)
• Density functional theory study on effect of NO annealing for SiC(0001) surface with atomic-scale steps
  di: Uemoto, Mitsuharu, et al.
  Pubblicazione: (2023)
• Theoretical investigation of interface atomic structure of graphene on NiFe alloy substrate
  di: Matsumoto, Naohiro, et al.
  Pubblicazione: (2025)
• Impact of the NO annealing duration on the SiO2/4H-SiC interface properties in lateral MOSFETs: the energetic profile of the near-interface-oxide traps
  di: Fiorenza, Patrick, et al.
  Pubblicazione: (2024)