Imagen de Portada

Density functional theory calculations for investigation of atomic structures of 4H-SiC/SiO$_2$ interface after NO annealing

Fuente: arXiv

Guardado en:

Detalles Bibliográficos
Autores principales:	Komatsu, Naoki, Ohmoto, Mizuho, Uemoto, Mitsuharu, Ono, Tomoya
Formato:	Preprint
Publicado:	2022
Materias:	Materials Science
Acceso en línea:	Acceder al recurso
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

Ejemplares similares

Density functional theory study of effect of NO annealing on electronic structure and carrier-scattering property of 4H-SiC(0001)/SiO$_2$ interface
por: Funaki, Nahoto, et al.
Publicado: (2025)

Theoretical investigation of vacancy related defects at 4H-SiC(000$\bar{1}$)/SiO$_2$ interface after wet oxidation
por: Tsunasaki, Mukai, et al.
Publicado: (2022)

Density functional theory study on effect of NO annealing for SiC(0001) surface with atomic-scale steps
por: Uemoto, Mitsuharu, et al.
Publicado: (2023)

Theoretical investigation of interface atomic structure of graphene on NiFe alloy substrate
por: Matsumoto, Naohiro, et al.
Publicado: (2025)

Impact of the NO annealing duration on the SiO2/4H-SiC interface properties in lateral MOSFETs: the energetic profile of the near-interface-oxide traps
por: Fiorenza, Patrick, et al.
Publicado: (2024)

Individual Characterization of Fast-Responding Trap States at the NO-Annealed SiO$_2$/4H-SiC Interface
por: Ono, Takahiro, et al.
Publicado: (2026)

The influence of nitrogen doping and annealing on the silicon vacancy in 4H-SiC
por: Carter, Samuel G., et al.
Publicado: (2025)

First-principles calculation of scattering potentials of Si-Ge and Sn-Ge dimers on Ge(001) surfaces
por: Ono, Tomoya
Publicado: (2012)

Enhancing Electrical and Interfacial Properties of BeO/4H‐SiC Structures with SiO 2 Interlayer
por: Sangoh Han, et al.
Publicado: (2025)

Impact of Oxygen Plasma Pre‐Treatment on Thermal Oxidation and Reliability of SiO 2 on 4H‐SiC
por: Chezhiyan Nanjappan, et al.
Publicado: (2026)

Surface Structuring of Patterned 4H-SiC Surfaces Using a SiC/Si/SiC Sandwich Approach
por: Jousseaume, Yann, et al.
Publicado: (2024)

First-principle study of spin transport property in $L1_0$-FePd(001)/graphene heterojunction
por: Adachi, Hayato, et al.
Publicado: (2023)

Numerical Simulation of the Optical Properties of SiC/SiO2 Quantum Dots
por: J. S. de Sousa
Publicado: (2004)

The study of 4H-SiC LGAD after proton radiation
por: Zhao, Sen, et al.
Publicado: (2025)

Thermal Boundary Resistance Measurement and Analysis Across SiC/SiO2 Interface
por: Deng, Shichen, et al.
Publicado: (2019)

Formation of luminescent defects in 4H-SiC upon ion irradiation and ns laser annealing
por: Zanella, Gabrielle, et al.
Publicado: (2026)

First-principles study of surface structure estimation in $L1_0$-FePd(001)/graphene heterojunction
por: Endo, Ryusuke, et al.
Publicado: (2025)

Heterointerface‐Engineered SiC@SiO 2 @C Nanofibers for Simultaneous Microwave Absorption and Corrosion Resistance
por: Limeng Song, et al.
Publicado: (2025)

Study on the Oxygen Partial Pressure Dependent Annealing Effect for SiO2/SiC Stack
por: Qian Zhang, et al.
Publicado: (2024)

Synthesis of SiC─SiO 2 ─Si Nanocomposites from Natural Resources and Waste for Corrosion Resistance and Circular Economy
por: Nehal Bargout, et al.
Publicado: (2025)

Spatially resolved dielectric loss at the Si/SiO$_2$ interface
por: Cowie, Megan, et al.
Publicado: (2023)

The Optimized Design of Sandwich Structured SiO2/C@SiC/SiO2 Composites Through Numerical Simulation for Temperature‐Resistant Radar and Infrared Compatible Stealth
por: Chuyang Liu, et al.
Publicado: (2024)

Unraveling the electronic structure of silicon vacancy centers in 4H-SiC
por: Younesi, Ali Tayefeh, et al.
Publicado: (2026)

Effect of edge dislocations on structural and electric properties of 4H-SiC
por: Łażewski, Jan, et al.
Publicado: (2015)

Effects of h‐BN on the thermal shock and oxidation resistance of SiO 2 ‐bonded SiC refractories
por: Jun Zhou, et al.
Publicado: (2024)

Development of Segmented 4H-SiC LGADs
por: Kráčmar, Vojtěch, et al.
Publicado: (2026)

Theoretical study on the effects of Si doping on the interface adhesion and failure behaviors of SiC/BN interface
por: Siyan Zhang, et al.
Publicado: (2025)

Relationship of defects and mechanical performance of high‐crystalline SiC fibers after ultra‐high‐temperature annealing
por: Jing Chen, et al.
Publicado: (2025)

Observation and manipulation of charge carrier distribution at the SiO$_2$/Si interface
por: Martins, Maria M., et al.
Publicado: (2024)

Synthesis of SiC–SiO 2 nanocomposites using a simple mechanical milling and their microwave absorption performance
por: Muzakkiy Putra Muhammad Akhir, et al.
Publicado: (2025)

Mechanism of Heteroepitaxial Growth of Boron Carbide on the Si-Face of 4H-SiC
por: Benamra, Yamina, et al.
Publicado: (2025)

Effects of annealing temperature on properties of SiO2 nanoparticles for supercapacitor applications
por: J.ThenmozhiP, et al.
Publicado: (2026)

Evidence of polyamorphic transitions during densified SiO$_2$ glass annealing
por: Cornet, Antoine, et al.
Publicado: (2024)

On the experimental properties of the TS defect in 4H-SiC
por: Lehmeyer, Johannes A. F., et al.
Publicado: (2024)

TCAD Parameters for 4H-SiC: A Review
por: Burin, Jürgen, et al.
Publicado: (2024)

Nanoindentation pop‐in anisotropy responses of 4H SiC
por: Y. F. Wang, et al.
Publicado: (2025)

TCAD Simulations of Radiation Damage in 4H-SiC
por: Burin, Jürgen, et al.
Publicado: (2024)

Charge Collection Performance of 4H-SiC LGAD
por: Zhao, Sen, et al.
Publicado: (2024)

Preparation of jointed composites with interconnected SiC nanowires network for nuclear SiC fiber reinforced SiC composites
por: Meihan Ren, et al.
Publicado: (2024)

Epitaxially-stabilized growth of wüstite FeO on 4H-SiC
por: Kimbugwe, Faisal, et al.
Publicado: (2025)