Quantum Anomalous Hall Effect in Antiferromagnetism

Fuente: arXiv
Enregistré dans:
Détails bibliographiques
Auteurs principaux: Guo, Peng-Jie, Liu, Zheng-Xin, Lu, Zhong-Yi
Format: Preprint
Publié: 2022
Sujets:
Accès en ligne:
Tags: Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!
_version_ 1866914719108956160
author Guo, Peng-Jie
Liu, Zheng-Xin
Lu, Zhong-Yi
author_facet Guo, Peng-Jie
Liu, Zheng-Xin
Lu, Zhong-Yi
contents So far, experimentally realized quantum anomalous Hall (QAH) insulators all exhibit ferromagnetic order and the QAH effect only occurs at very low temperatures. On the other hand, up to now the QAH effect in antiferromagnetic (AFM) materials has never been reported. In this letter, we realize the QAH effect by proposing a four-band lattice model with static AFM order, which indicates that the QAH effect can be found in AFM materials. Then, as a prototype, we demonstrate that a monolayer CrO can be switched from an AFM Weyl semimetal to an AFM QAH insulator by applying strain, based on symmetry analysis and the first-principles electronic structure calculations. Our work not only proposes a new scenario to search for QAH insulators in materials, but also reveals a way to considerably increase the critical temperature of the QAH phase.
format Preprint
id arxiv_https___arxiv_org_abs_2205_06702
institution arXiv
publishDate 2022
record_format arxiv
spellingShingle Quantum Anomalous Hall Effect in Antiferromagnetism
Guo, Peng-Jie
Liu, Zheng-Xin
Lu, Zhong-Yi
Materials Science
Mesoscale and Nanoscale Physics
Strongly Correlated Electrons
So far, experimentally realized quantum anomalous Hall (QAH) insulators all exhibit ferromagnetic order and the QAH effect only occurs at very low temperatures. On the other hand, up to now the QAH effect in antiferromagnetic (AFM) materials has never been reported. In this letter, we realize the QAH effect by proposing a four-band lattice model with static AFM order, which indicates that the QAH effect can be found in AFM materials. Then, as a prototype, we demonstrate that a monolayer CrO can be switched from an AFM Weyl semimetal to an AFM QAH insulator by applying strain, based on symmetry analysis and the first-principles electronic structure calculations. Our work not only proposes a new scenario to search for QAH insulators in materials, but also reveals a way to considerably increase the critical temperature of the QAH phase.
title Quantum Anomalous Hall Effect in Antiferromagnetism
topic Materials Science
Mesoscale and Nanoscale Physics
Strongly Correlated Electrons
url https://arxiv.org/abs/2205.06702