Spin-defect characteristics of single sulfur vacancies in monolayer $\text{MoS}_2$
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arXiv
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| Format: | Preprint |
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2022
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| author | Hötger, Alexander Amit, Tomer Klein, Julian Barthelmi, Katja Pelini, Thomas Delhomme, Alex Rey, Sergio Potemski, Marek Faugeras, Clément Cohen, Galit Hernangómez-Pérez, Daniel Taniguchi, Takashi Watanabe, Kenji Kastl, Christoph Finley, Jonathan J. Refaely-Abramson, Sivan Holleitner, Alexander W. Stier, Andreas V. |
| author_facet | Hötger, Alexander Amit, Tomer Klein, Julian Barthelmi, Katja Pelini, Thomas Delhomme, Alex Rey, Sergio Potemski, Marek Faugeras, Clément Cohen, Galit Hernangómez-Pérez, Daniel Taniguchi, Takashi Watanabe, Kenji Kastl, Christoph Finley, Jonathan J. Refaely-Abramson, Sivan Holleitner, Alexander W. Stier, Andreas V. |
| contents | Single spin defects in 2D transition-metal dichalcogenides are natural spin-photon interfaces for quantum applications. Here we report high-field magneto-photoluminescence spectroscopy from three emission lines (Q1, Q2 and Q*) of He-ion induced sulfur vacancies in monolayer $\text{MoS}_2$. Analysis of the asymmetric PL lineshapes in combination with the diamagnetic shift of Q1 and Q2 yields a consistent picture of localized emitters with a wavefunction extent of $\sim$ 3.5 nm. The distinct valley-Zeeman splitting in out-of-plane $B$-fields and the brightening of dark states through in-plane $B$-fields necessitates spin-valley selectivity of the defect states and lifted spin-degeneracy at zero field. Comparing our results to ab-initio calculations identifies the nature of Q1 and Q2 and suggests that Q* is the emission from a chemically functionalized defect. Analysis of the optical degree of circular polarization reveals that the Fermi level is a parameter that enables the tunability of the emitter. These results show that defects in 2D semiconductors may be utilized for quantum technologies. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2205_10286 |
| institution | arXiv |
| publishDate | 2022 |
| record_format | arxiv |
| spellingShingle | Spin-defect characteristics of single sulfur vacancies in monolayer $\text{MoS}_2$ Hötger, Alexander Amit, Tomer Klein, Julian Barthelmi, Katja Pelini, Thomas Delhomme, Alex Rey, Sergio Potemski, Marek Faugeras, Clément Cohen, Galit Hernangómez-Pérez, Daniel Taniguchi, Takashi Watanabe, Kenji Kastl, Christoph Finley, Jonathan J. Refaely-Abramson, Sivan Holleitner, Alexander W. Stier, Andreas V. Mesoscale and Nanoscale Physics Single spin defects in 2D transition-metal dichalcogenides are natural spin-photon interfaces for quantum applications. Here we report high-field magneto-photoluminescence spectroscopy from three emission lines (Q1, Q2 and Q*) of He-ion induced sulfur vacancies in monolayer $\text{MoS}_2$. Analysis of the asymmetric PL lineshapes in combination with the diamagnetic shift of Q1 and Q2 yields a consistent picture of localized emitters with a wavefunction extent of $\sim$ 3.5 nm. The distinct valley-Zeeman splitting in out-of-plane $B$-fields and the brightening of dark states through in-plane $B$-fields necessitates spin-valley selectivity of the defect states and lifted spin-degeneracy at zero field. Comparing our results to ab-initio calculations identifies the nature of Q1 and Q2 and suggests that Q* is the emission from a chemically functionalized defect. Analysis of the optical degree of circular polarization reveals that the Fermi level is a parameter that enables the tunability of the emitter. These results show that defects in 2D semiconductors may be utilized for quantum technologies. |
| title | Spin-defect characteristics of single sulfur vacancies in monolayer $\text{MoS}_2$ |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2205.10286 |