Operation of Cs-Sb-O activated GaAs in a high voltage DC electron gun at high average current
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arXiv
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| Autori principali: | , , , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2022
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| _version_ | 1866916282826227712 |
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| author | Bae, Jai Kwan Andorf, Matthew Bartnik, Adam Galdi, Alice Cultrera, Luca Maxson, Jared Bazarov, Ivan |
| author_facet | Bae, Jai Kwan Andorf, Matthew Bartnik, Adam Galdi, Alice Cultrera, Luca Maxson, Jared Bazarov, Ivan |
| contents | Negative Electron Affinity (NEA) activated GaAs photocathodes are the most popular option for generating a high current (> 1 mA) spin-polarized electron beam. Despite its popularity, a short operational lifetime is the main drawback of this material. Recent works have shown that the lifetime can be improved by using a robust Cs-Sb-O NEA layer with minimal adverse effects. In this work, we operate GaAs photocathodes with this new activation method in a high voltage environment to extract a high current. We observed spectral dependence on the lifetime improvement. In particular, we saw a 45% increase in the lifetime at 780 nm for Cs-Sb-O activated GaAs compared to Cs-O activated GaAs. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2205_13632 |
| institution | arXiv |
| publishDate | 2022 |
| record_format | arxiv |
| spellingShingle | Operation of Cs-Sb-O activated GaAs in a high voltage DC electron gun at high average current Bae, Jai Kwan Andorf, Matthew Bartnik, Adam Galdi, Alice Cultrera, Luca Maxson, Jared Bazarov, Ivan Accelerator Physics Negative Electron Affinity (NEA) activated GaAs photocathodes are the most popular option for generating a high current (> 1 mA) spin-polarized electron beam. Despite its popularity, a short operational lifetime is the main drawback of this material. Recent works have shown that the lifetime can be improved by using a robust Cs-Sb-O NEA layer with minimal adverse effects. In this work, we operate GaAs photocathodes with this new activation method in a high voltage environment to extract a high current. We observed spectral dependence on the lifetime improvement. In particular, we saw a 45% increase in the lifetime at 780 nm for Cs-Sb-O activated GaAs compared to Cs-O activated GaAs. |
| title | Operation of Cs-Sb-O activated GaAs in a high voltage DC electron gun at high average current |
| topic | Accelerator Physics |
| url | https://arxiv.org/abs/2205.13632 |