Extrinsic tunnel Hall effect in CoFeB/MgO/Pt junctions
Fuente:
arXiv
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| Autori principali: | , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2022
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| _version_ | 1866915218931580928 |
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| author | Pashenkin, I. Yu. Sapozhnikov, M. V. Gusev, N. S. Karashtin, E. A. Fraerman, A. A. |
| author_facet | Pashenkin, I. Yu. Sapozhnikov, M. V. Gusev, N. S. Karashtin, E. A. Fraerman, A. A. |
| contents | The Hall effect that occurs when current flows through a CoFeB/MgO/Pt tunnel junction is investigated. It is shown that the transverse voltage in Pt electrode is nonlinear on a DC voltage applied to the tunnel junction. It has both linear (odd) and quadratic (even) parts. The linear part contains well-known contributions of the anomalous Hall effect in the ferromagnetic electrode, inverse spin-hall effect in platinum and others. The quadratic part is a phenomenon caused by the spin-orbit scattering of electrons in an external electric field induced by a voltage applied to the barrier. This field reaches values of $10^9$ V/m which is close to internal atomic fields. The magnitude of both effects decreases as thickness of Pt electrode is increased due to shunting effects. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2206_10264 |
| institution | arXiv |
| publishDate | 2022 |
| record_format | arxiv |
| spellingShingle | Extrinsic tunnel Hall effect in CoFeB/MgO/Pt junctions Pashenkin, I. Yu. Sapozhnikov, M. V. Gusev, N. S. Karashtin, E. A. Fraerman, A. A. Other Condensed Matter Mesoscale and Nanoscale Physics The Hall effect that occurs when current flows through a CoFeB/MgO/Pt tunnel junction is investigated. It is shown that the transverse voltage in Pt electrode is nonlinear on a DC voltage applied to the tunnel junction. It has both linear (odd) and quadratic (even) parts. The linear part contains well-known contributions of the anomalous Hall effect in the ferromagnetic electrode, inverse spin-hall effect in platinum and others. The quadratic part is a phenomenon caused by the spin-orbit scattering of electrons in an external electric field induced by a voltage applied to the barrier. This field reaches values of $10^9$ V/m which is close to internal atomic fields. The magnitude of both effects decreases as thickness of Pt electrode is increased due to shunting effects. |
| title | Extrinsic tunnel Hall effect in CoFeB/MgO/Pt junctions |
| topic | Other Condensed Matter Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2206.10264 |