Molecular Beam Homoepitaxy of N-polar AlN on bulk AlN substrates
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| Main Authors: | , , , , , , , , |
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| Format: | Preprint |
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2022
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| _version_ | 1866909226495901696 |
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| author | Singhal, Jashan Encomendero, Jimy Cho, Yongjin van Deurzen, Len Zhang, Zexuan Nomoto, Kazuki Toita, Masato Xing, Huili Grace Jena, Debdeep |
| author_facet | Singhal, Jashan Encomendero, Jimy Cho, Yongjin van Deurzen, Len Zhang, Zexuan Nomoto, Kazuki Toita, Masato Xing, Huili Grace Jena, Debdeep |
| contents | N-polar AlN epilayers were grown on the N-face of single crystal bulk AlN substrates by plasma assisted molecular beam epitaxy (PA-MBE). A combination of in situ thermal deoxidation and Al-assisted thermal desorption at high temperature helped in removing native surface oxides and impurities from the N-polar surface of the substrate enabling successful homoepitaxy. Subsequent epitaxial growth of AlN layer on the in situ cleaned substrates, grown in sufficiently high Al droplet regime, exhibited smooth surface morphologies with clean and wide atomic steps. KOH etch studies confirmed the N-polarity of the homoepitaxial films. Secondary ion mass spectrometry profiles show Si and H impurity concentrations below the noise levels, whereas O and C impurities concentrations of ~ 8x10^{17} atoms/cm^3 and ~ 2x10^{17} atoms/cm^3 are observed respectively. Though the structural defect densities are low, they interestingly appear as inversion domains of different dimensionalities. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2206_11370 |
| institution | arXiv |
| publishDate | 2022 |
| record_format | arxiv |
| spellingShingle | Molecular Beam Homoepitaxy of N-polar AlN on bulk AlN substrates Singhal, Jashan Encomendero, Jimy Cho, Yongjin van Deurzen, Len Zhang, Zexuan Nomoto, Kazuki Toita, Masato Xing, Huili Grace Jena, Debdeep Materials Science N-polar AlN epilayers were grown on the N-face of single crystal bulk AlN substrates by plasma assisted molecular beam epitaxy (PA-MBE). A combination of in situ thermal deoxidation and Al-assisted thermal desorption at high temperature helped in removing native surface oxides and impurities from the N-polar surface of the substrate enabling successful homoepitaxy. Subsequent epitaxial growth of AlN layer on the in situ cleaned substrates, grown in sufficiently high Al droplet regime, exhibited smooth surface morphologies with clean and wide atomic steps. KOH etch studies confirmed the N-polarity of the homoepitaxial films. Secondary ion mass spectrometry profiles show Si and H impurity concentrations below the noise levels, whereas O and C impurities concentrations of ~ 8x10^{17} atoms/cm^3 and ~ 2x10^{17} atoms/cm^3 are observed respectively. Though the structural defect densities are low, they interestingly appear as inversion domains of different dimensionalities. |
| title | Molecular Beam Homoepitaxy of N-polar AlN on bulk AlN substrates |
| topic | Materials Science |
| url | https://arxiv.org/abs/2206.11370 |